BSC040N10NS5SCATMA1
  • Share:

Infineon Technologies BSC040N10NS5SCATMA1

Manufacturer No:
BSC040N10NS5SCATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 140A WSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC040N10NS5SCATMA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. This component is designed to meet the demands of modern power electronics, offering high current handling and low on-resistance. It is packaged in an 8-pin SuperSO8 5 x 6 DSC, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Continuous Drain Current140 A
Maximum Drain Source Voltage100 V
Package Type8-Pin SuperSO8 5 x 6 DSC

Key Features

  • High current handling capability of up to 140 A.
  • Low on-resistance, ensuring efficient power management.
  • Compact 8-pin SuperSO8 5 x 6 DSC package for space-saving designs.
  • High voltage rating of 100 V, suitable for various power applications.

Applications

The BSC040N10NS5SCATMA1 is versatile and can be used in a range of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive electronics, such as battery management and power distribution.
  • Industrial power systems, including inverters and switch-mode power supplies.

Q & A

  1. What is the maximum continuous drain current of the BSC040N10NS5SCATMA1?
    The maximum continuous drain current is 140 A.
  2. What is the maximum drain-source voltage of this MOSFET?
    The maximum drain-source voltage is 100 V.
  3. What package type is used for the BSC040N10NS5SCATMA1?
    The package type is an 8-pin SuperSO8 5 x 6 DSC.
  4. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, automotive electronics, and industrial power systems.
  5. Why is the BSC040N10NS5SCATMA1 considered high-performance?
    It is considered high-performance due to its high current handling capability and low on-resistance.
  6. Where can I find detailed specifications for the BSC040N10NS5SCATMA1?
    Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor websites like Digi-Key, Mouser, and RS Components.
  7. Is the BSC040N10NS5SCATMA1 suitable for high-voltage applications?
    Yes, it is suitable for high-voltage applications up to 100 V.
  8. What are the benefits of using the SuperSO8 package?
    The SuperSO8 package offers a compact design, which is beneficial for space-saving in modern electronic systems.
  9. Can the BSC040N10NS5SCATMA1 be used in automotive applications?
    Yes, it can be used in automotive applications due to its robust specifications and reliability.
  10. How does the BSC040N10NS5SCATMA1 contribute to efficient power management?
    It contributes to efficient power management through its low on-resistance, which minimizes power losses during operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-WSON-8-2
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$4.45
106

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BSC040N10NS5SCATMA1 BSC070N10NS5SCATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc) 14A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.8V @ 95µA 3.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 50 V 2700 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 167W (Tc) 3W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-WSON-8-2 PG-WSON-8-2
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAS40-06E6327
BAS40-06E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAW 56 E6433
BAW 56 E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC860BWE6327
BC860BWE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCX5310E6327HTSA1
BCX5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3