BSC040N10NS5SCATMA1
  • Share:

Infineon Technologies BSC040N10NS5SCATMA1

Manufacturer No:
BSC040N10NS5SCATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 140A WSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC040N10NS5SCATMA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. This component is designed to meet the demands of modern power electronics, offering high current handling and low on-resistance. It is packaged in an 8-pin SuperSO8 5 x 6 DSC, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Continuous Drain Current140 A
Maximum Drain Source Voltage100 V
Package Type8-Pin SuperSO8 5 x 6 DSC

Key Features

  • High current handling capability of up to 140 A.
  • Low on-resistance, ensuring efficient power management.
  • Compact 8-pin SuperSO8 5 x 6 DSC package for space-saving designs.
  • High voltage rating of 100 V, suitable for various power applications.

Applications

The BSC040N10NS5SCATMA1 is versatile and can be used in a range of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive electronics, such as battery management and power distribution.
  • Industrial power systems, including inverters and switch-mode power supplies.

Q & A

  1. What is the maximum continuous drain current of the BSC040N10NS5SCATMA1?
    The maximum continuous drain current is 140 A.
  2. What is the maximum drain-source voltage of this MOSFET?
    The maximum drain-source voltage is 100 V.
  3. What package type is used for the BSC040N10NS5SCATMA1?
    The package type is an 8-pin SuperSO8 5 x 6 DSC.
  4. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, automotive electronics, and industrial power systems.
  5. Why is the BSC040N10NS5SCATMA1 considered high-performance?
    It is considered high-performance due to its high current handling capability and low on-resistance.
  6. Where can I find detailed specifications for the BSC040N10NS5SCATMA1?
    Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor websites like Digi-Key, Mouser, and RS Components.
  7. Is the BSC040N10NS5SCATMA1 suitable for high-voltage applications?
    Yes, it is suitable for high-voltage applications up to 100 V.
  8. What are the benefits of using the SuperSO8 package?
    The SuperSO8 package offers a compact design, which is beneficial for space-saving in modern electronic systems.
  9. Can the BSC040N10NS5SCATMA1 be used in automotive applications?
    Yes, it can be used in automotive applications due to its robust specifications and reliability.
  10. How does the BSC040N10NS5SCATMA1 contribute to efficient power management?
    It contributes to efficient power management through its low on-resistance, which minimizes power losses during operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-WSON-8-2
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$4.45
106

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BSC040N10NS5SCATMA1 BSC070N10NS5SCATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc) 14A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.8V @ 95µA 3.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 50 V 2700 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 167W (Tc) 3W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-WSON-8-2 PG-WSON-8-2
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAS16UE6727HTSA1
BAS16UE6727HTSA1
Infineon Technologies
DIODE GP 80V 100MA SC74
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BC847CWH6327XTSA1
BC847CWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
ICE2PCS02GFUMA1
ICE2PCS02GFUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
CY7C53150-20AXIT
CY7C53150-20AXIT
Infineon Technologies
IC PROCESSOR NEURON 64LQFP
CY7C67300-100AXIT
CY7C67300-100AXIT
Infineon Technologies
IC USB HOST/PERIPH CNTRL 100LQFP
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
STK14CA8-NF45ITR
STK14CA8-NF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC