BSC040N10NS5SCATMA1
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Infineon Technologies BSC040N10NS5SCATMA1

Manufacturer No:
BSC040N10NS5SCATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 140A WSON-8
Delivery:
Payment:
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Product Introduction

Overview

The BSC040N10NS5SCATMA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. This component is designed to meet the demands of modern power electronics, offering high current handling and low on-resistance. It is packaged in an 8-pin SuperSO8 5 x 6 DSC, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Continuous Drain Current140 A
Maximum Drain Source Voltage100 V
Package Type8-Pin SuperSO8 5 x 6 DSC

Key Features

  • High current handling capability of up to 140 A.
  • Low on-resistance, ensuring efficient power management.
  • Compact 8-pin SuperSO8 5 x 6 DSC package for space-saving designs.
  • High voltage rating of 100 V, suitable for various power applications.

Applications

The BSC040N10NS5SCATMA1 is versatile and can be used in a range of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive electronics, such as battery management and power distribution.
  • Industrial power systems, including inverters and switch-mode power supplies.

Q & A

  1. What is the maximum continuous drain current of the BSC040N10NS5SCATMA1?
    The maximum continuous drain current is 140 A.
  2. What is the maximum drain-source voltage of this MOSFET?
    The maximum drain-source voltage is 100 V.
  3. What package type is used for the BSC040N10NS5SCATMA1?
    The package type is an 8-pin SuperSO8 5 x 6 DSC.
  4. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, automotive electronics, and industrial power systems.
  5. Why is the BSC040N10NS5SCATMA1 considered high-performance?
    It is considered high-performance due to its high current handling capability and low on-resistance.
  6. Where can I find detailed specifications for the BSC040N10NS5SCATMA1?
    Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor websites like Digi-Key, Mouser, and RS Components.
  7. Is the BSC040N10NS5SCATMA1 suitable for high-voltage applications?
    Yes, it is suitable for high-voltage applications up to 100 V.
  8. What are the benefits of using the SuperSO8 package?
    The SuperSO8 package offers a compact design, which is beneficial for space-saving in modern electronic systems.
  9. Can the BSC040N10NS5SCATMA1 be used in automotive applications?
    Yes, it can be used in automotive applications due to its robust specifications and reliability.
  10. How does the BSC040N10NS5SCATMA1 contribute to efficient power management?
    It contributes to efficient power management through its low on-resistance, which minimizes power losses during operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-WSON-8-2
Package / Case:8-PowerWDFN
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Similar Products

Part Number BSC040N10NS5SCATMA1 BSC070N10NS5SCATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc) 14A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.8V @ 95µA 3.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 50 V 2700 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 167W (Tc) 3W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-WSON-8-2 PG-WSON-8-2
Package / Case 8-PowerWDFN 8-PowerWDFN

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