NVMFS6B14NLT3G
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onsemi NVMFS6B14NLT3G

Manufacturer No:
NVMFS6B14NLT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 11A/55A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS6B14NLT3G is a single N-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. With a small footprint of 5x6 mm, it is ideal for compact design requirements. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGS ±16 V
Continuous Drain Current (TC = 25°C) ID 55 A
Continuous Drain Current (TC = 100°C) ID 39 A
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V
Gate Threshold Voltage VGS(TH) 1.0 - 3.0 V
Drain-to-Source On Resistance RDS(on) 13 mΩ (typical)

Key Features

  • Small Footprint: The device has a compact 5x6 mm footprint, making it ideal for space-constrained designs.
  • Low RDS(on): With a typical on-resistance of 13 mΩ, it minimizes conduction losses.
  • Low QG and Capacitance: Low gate charge and capacitance reduce driver losses.
  • Wettable Flank Option: The NVMFS6B14NLWF option provides enhanced optical inspection capabilities.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive standards for reliability and quality.
  • Pb-Free and RoHS Compliant: Ensures environmental compliance.

Applications

The NVMFS6B14NLT3G is suitable for a wide range of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
  • Power supplies: Its low on-resistance and high current handling make it suitable for power supply designs.
  • Motor control: Used in motor control circuits for efficient and reliable operation.
  • Industrial control: Suitable for various industrial control applications requiring high performance and reliability.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS6B14NLT3G?

    The maximum drain-to-source voltage (VDSS) is 100 V.

  2. What is the typical on-resistance of the NVMFS6B14NLT3G?

    The typical on-resistance (RDS(on)) is 13 mΩ.

  3. Is the NVMFS6B14NLT3G AEC-Q101 qualified?
  4. What is the continuous drain current at TC = 25°C?

    The continuous drain current at TC = 25°C is 55 A.

  5. Is the NVMFS6B14NLT3G Pb-free and RoHS compliant?
  6. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) range is from 1.0 to 3.0 V.

  7. What is the maximum gate-to-source voltage?

    The maximum gate-to-source voltage (VGS) is ±16 V.

  8. What are the package options for the NVMFS6B14NLT3G?

    The device is available in DFN5 packages, including options with wettable flanks for enhanced optical inspection.

  9. What are some typical applications for the NVMFS6B14NLT3G?

    Typical applications include automotive systems, power supplies, motor control, and industrial control.

  10. How does the device handle thermal performance?

    The device has a robust thermal response, with detailed thermal characteristics provided in the datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NVMFS6B14NLWFT1G
NVMFS6B14NLWFT1G
MOSFET N-CH 100V 11A/55A 5DFN
NVMFS6B14NLT1G
NVMFS6B14NLT1G
MOSFET N-CH 100V 11A/55A 5DFN
NVMFS6B14NLWFT3G
NVMFS6B14NLWFT3G
MOSFET N-CH 100V 11A/55A 5DFN

Similar Products

Part Number NVMFS6B14NLT3G NVMFS6B14NT3G NVMFS6B14NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc) 55A (Tc) 11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V 15mOhm @ 20A, 10V 13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V 20 nC @ 10 V 8 nC @ 4.5 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 25 V 1300 pF @ 50 V 1680 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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