Overview
The NVMFS6B14NLWFT1G is a single N-channel power MOSFET produced by ON Semiconductor. This device is designed for high-performance applications requiring low on-resistance and minimal conduction losses. It features a compact DFN5 (SO-8FL) package with a small footprint of 5x6 mm, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. It is also Pb-free and RoHS compliant, adhering to environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V |
| Gate-to-Source Voltage | VGS | ±16 | V |
| Continuous Drain Current (TC = 25°C) | ID | 55 | A |
| Continuous Drain Current (TC = 100°C) | ID | 39 | A |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 20 A) | RDS(on) | 10.5 - 13 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 1.6 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 3.0 | V |
| Input Capacitance | CISS | 1300 | pF |
| Total Gate Charge | QG(TOT) | 20 | nC |
Key Features
- Compact Design: Small footprint (5x6 mm) in DFN5 (SO-8FL) package for space-constrained applications.
- Low On-Resistance: Minimizes conduction losses with RDS(on) as low as 10.5 mΩ at VGS = 10 V and ID = 20 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and industrial environments.
- Pb-Free and RoHS Compliant: Adheres to environmental standards.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Industrial Power Systems: Used in industrial power supplies, motor control, and power management systems.
- Consumer Electronics: Ideal for high-performance consumer electronics requiring efficient power management.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient energy conversion.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS6B14NLWFT1G?
The maximum drain-to-source voltage (VDSS) is 100 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 55 A at 25°C and 39 A at 100°C.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is between 10.5 mΩ and 13 mΩ at VGS = 10 V and ID = 20 A.
- Is the NVMFS6B14NLWFT1G Pb-free and RoHS compliant?
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 1.6 °C/W.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is between 1.0 V and 3.0 V.
- What is the total gate charge?
The total gate charge (QG(TOT)) is 20 nC.
- Is the device AEC-Q101 qualified?
- What package type does the NVMFS6B14NLWFT1G come in?
The device comes in a DFN5 (SO-8FL) package.
- What are some typical applications of the NVMFS6B14NLWFT1G?
Typical applications include automotive systems, industrial power systems, consumer electronics, and renewable energy systems.
