NVMFS6B14NLT1G
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onsemi NVMFS6B14NLT1G

Manufacturer No:
NVMFS6B14NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 11A/55A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS6B14NLT1G is a single N-Channel Power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high current handling. This device is part of onsemi's portfolio of automotive-grade MOSFETs, qualified to AEC-Q101 standards, ensuring reliability and durability in demanding environments.

Key Specifications

ParameterValue
Maximum Operating Temperature+175°C
Power Dissipation (Pd)94 W
Channel ModeEnhancement
QualificationAEC-Q101
Drain-Source Voltage (Vds)100 V
On-Resistance (Rds(on))13 mΩ @ 4.5 V
Continuous Drain Current (Id)55 A

Key Features

  • Low on-resistance (Rds(on)) of 13 mΩ @ 4.5 V, reducing power losses and improving efficiency.
  • High continuous drain current (Id) of 55 A, suitable for high-power applications.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive and other harsh environments.
  • Maximum operating temperature of +175°C, making it suitable for high-temperature applications.
  • Enhancement mode operation, providing better control over the MOSFET.

Applications

The NVMFS6B14NLT1G is ideal for various high-power applications, including:

  • Automotive systems: Such as electric vehicles, hybrid vehicles, and other automotive power management systems.
  • Industrial power supplies: High-efficiency power supplies, DC-DC converters, and motor control systems.
  • Renewable energy systems: Solar and wind power systems requiring high reliability and efficiency.
  • Power tools and equipment: High-power tools and equipment that demand low on-resistance and high current handling.

Q & A

  1. What is the maximum operating temperature of the NVMFS6B14NLT1G?
    The maximum operating temperature is +175°C.
  2. What is the on-resistance (Rds(on)) of the NVMFS6B14NLT1G?
    The on-resistance is 13 mΩ @ 4.5 V.
  3. What is the continuous drain current (Id) of the NVMFS6B14NLT1G?
    The continuous drain current is 55 A.
  4. Is the NVMFS6B14NLT1G qualified for automotive use?
    Yes, it is qualified to AEC-Q101 standards.
  5. What is the drain-source voltage (Vds) rating of the NVMFS6B14NLT1G?
    The drain-source voltage rating is 100 V.
  6. What are some typical applications of the NVMFS6B14NLT1G?
    Typical applications include automotive systems, industrial power supplies, renewable energy systems, and power tools.
  7. What is the power dissipation (Pd) of the NVMFS6B14NLT1G?
    The power dissipation is 94 W.
  8. Is the NVMFS6B14NLT1G an enhancement mode MOSFET?
    Yes, it operates in enhancement mode.
  9. Where can I find detailed specifications and datasheets for the NVMFS6B14NLT1G?
    Detailed specifications and datasheets can be found on the onsemi website and through distributors like Mouser Electronics.
  10. Can the NVMFS6B14NLT1G be used in high-temperature environments?
    Yes, it is designed to operate in high-temperature environments up to +175°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS6B14NLT1G NVMFS6B14NLT3G NVMFS6B14NT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V 100 V -
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc) 11A (Ta), 55A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V 13mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V 8 nC @ 4.5 V -
Vgs (Max) ±16V ±16V -
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 25 V 1680 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 94W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) -
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads -

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