Overview
The NVMFS5C456NLT1G is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET features a compact DFN5 (5x6 mm) package, making it ideal for space-constrained designs. With its low RDS(on) and minimal driver losses, this device is suited for a variety of power management and automotive applications. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 87 | A |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 20 A) | RDS(on) | 3.7 mΩ | mΩ |
| Junction-to-Case Thermal Resistance | RJC | 2.7 °C/W | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 42 °C/W | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 V | V |
Key Features
- Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with a low on-resistance of 3.7 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection (NVMFS5C456NLWF).
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with RoHS regulations.
Applications
The NVMFS5C456NLT1G is suitable for various high-power applications, including:
- Automotive systems: Ideal for power management in automotive electronics due to its AEC-Q101 qualification.
- Power supplies: Used in high-efficiency power supply designs where low RDS(on) and minimal driver losses are crucial.
- Motor control: Suitable for motor drive applications requiring high current handling and low on-resistance.
- Industrial control: Used in industrial control systems where reliability and high performance are essential.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C456NLT1G?
The maximum drain-to-source voltage is 40 V. - What is the typical on-resistance of the NVMFS5C456NLT1G at VGS = 10 V?
The typical on-resistance is 3.7 mΩ at VGS = 10 V and ID = 20 A. - Is the NVMFS5C456NLT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable. - What is the junction-to-case thermal resistance of the NVMFS5C456NLT1G?
The junction-to-case thermal resistance is 2.7 °C/W. - Is the NVMFS5C456NLT1G Pb-Free and RoHS compliant?
Yes, it is Pb-Free and RoHS compliant. - What is the gate threshold voltage range of the NVMFS5C456NLT1G?
The gate threshold voltage range is 1.2 to 2.0 V. - What are the package options for the NVMFS5C456NLT1G?
The device is available in DFN5 (5x6 mm) and DFNW5 (with wettable flanks) packages. - What is the continuous drain current rating of the NVMFS5C456NLT1G at TC = 25°C?
The continuous drain current rating is 87 A at TC = 25°C. - What are some typical applications of the NVMFS5C456NLT1G?
Typical applications include automotive systems, power supplies, motor control, and industrial control systems. - How does the NVMFS5C456NLT1G minimize driver losses?
The device minimizes driver losses due to its low total gate charge and capacitance.
