NVMFS5C456NLAFT1G
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onsemi NVMFS5C456NLAFT1G

Manufacturer No:
NVMFS5C456NLAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 87A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C456NLAFT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET is part of onsemi's automotive-grade portfolio, complying with AEC-Q101 qualification standards. It features a compact DFN5 package, making it suitable for space-constrained designs while offering robust electrical performance.

Key Specifications

ParameterValue
Channel ModeEnhancement
Maximum Operating Temperature+175°C
Power Dissipation (Pd)55 W
Drain-Source Voltage (Vds)40 V
Continuous Drain Current (Id)22 A
Package TypeDFN5 (5-pin)
QualificationAEC-Q101

Key Features

  • High current capability of up to 22 A
  • Low on-resistance (Rds(on)) for efficient switching
  • Compact DFN5 package for space-saving designs
  • AEC-Q101 qualified for automotive applications
  • Enhancement mode N-Channel MOSFET for reliable operation
  • High maximum operating temperature of +175°C

Applications

The NVMFS5C456NLAFT1G is designed for various automotive and industrial applications where high reliability and performance are critical. These include but are not limited to:

  • Automotive systems such as power steering, braking, and fuel injection
  • Industrial power supplies and motor control systems
  • High-power switching applications requiring low on-resistance and high current handling

Q & A

  1. What is the maximum operating temperature of the NVMFS5C456NLAFT1G?
    The maximum operating temperature is +175°C.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 22 A.
  3. What package type does the NVMFS5C456NLAFT1G come in?
    The MOSFET comes in a DFN5 (5-pin) package.
  4. Is the NVMFS5C456NLAFT1G qualified for automotive use?
    Yes, it is AEC-Q101 qualified.
  5. What is the drain-source voltage rating of this MOSFET?
    The drain-source voltage rating is 40 V.
  6. What is the power dissipation capability of the NVMFS5C456NLAFT1G?
    The power dissipation capability is 55 W.
  7. What type of channel mode does this MOSFET operate in?
    The MOSFET operates in enhancement mode.
  8. Where can I find detailed specifications for the NVMFS5C456NLAFT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser Electronics.
  9. What are some common applications for the NVMFS5C456NLAFT1G?
    Common applications include automotive systems, industrial power supplies, and high-power switching applications.
  10. Why is the DFN5 package beneficial for this MOSFET?
    The DFN5 package is beneficial because it is compact, making it suitable for space-constrained designs while maintaining high electrical performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:87A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C456NLAFT1G NVMFS5C456NLAFT3G NVMFS5C456NLWFT1G NVMFS5C450NLAFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Not For New Designs Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 87A (Tc) 22A (Ta), 87A (Tc) 87A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V 3.7mOhm @ 20A, 10V 3.7mOhm @ 20A, 10V 2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 50µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V 18 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V 1600 pF @ 25 V 1600 pF @ 25 V 2100 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) 55W (Tc) 3.6W (Ta), 55W (Tc) 3.6W (Ta), 55W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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