Overview
The NVMFS5C450NLT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. With a compact DFN5 (5x6 mm) package, it is ideal for space-constrained designs. The MOSFET features a low RDS(on) of 2.8 mΩ at VGS = 10 V, making it suitable for minimizing conduction losses. It is also AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 110 | A |
| Continuous Drain Current (TA = 25°C) | ID | 27 | A |
| Power Dissipation (TC = 25°C) | PD | 68 | W |
| Power Dissipation (TA = 25°C) | PD | 3.7 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 740 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 40 A) | RDS(on) | 2.3 - 2.8 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
Key Features
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flank Option (NVMFS5C450NLWF) for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
The NVMFS5C450NLT1G is suitable for a variety of high-current applications, including but not limited to:
- Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Industrial Power Supplies: Its high current handling and low on-resistance make it a good choice for industrial power supply designs.
- Motor Control: It can be used in motor control circuits where high current and efficiency are required.
- Power Management: Suitable for various power management applications requiring high reliability and performance.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C450NLT1G? The maximum drain-to-source voltage is 40 V.
- What is the continuous drain current at TC = 25°C? The continuous drain current at TC = 25°C is 110 A.
- What is the power dissipation at TA = 25°C? The power dissipation at TA = 25°C is 3.7 W.
- What is the pulsed drain current for a pulse width of 10 μs? The pulsed drain current is 740 A.
- What is the operating junction and storage temperature range? The operating junction and storage temperature range is −55 to +175 °C.
- What is the typical on-resistance at VGS = 10 V and ID = 40 A? The typical on-resistance is 2.3 - 2.8 mΩ.
- Is the NVMFS5C450NLT1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- Is the device Pb-Free and RoHS compliant? Yes, the device is Pb-Free and RoHS compliant.
- What package type is used for the NVMFS5C450NLT1G? The device is packaged in a DFN5 (5x6 mm) package.
- What are some typical applications for this MOSFET? Typical applications include automotive systems, industrial power supplies, motor control, and general power management.
