Overview
The NVD5867NLT4G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to operate at high current and voltage levels, making it suitable for a variety of automotive and industrial applications. It features a low on-resistance (RDS(on)) of 39 mΩ at 10 V and 50 mΩ at 4.5 V, which minimizes conduction losses and enhances overall efficiency. The MOSFET is packaged in a DPAK (TO-252) case, which is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (RθJC) | ID | 22 A (TC = 25°C), 16 A (TC = 100°C) | A |
| Power Dissipation (RθJC) | PD | 43 W (TC = 25°C), 21 W (TC = 100°C) | W |
| Pulsed Drain Current | IDM | 85 A | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 175 | °C |
| Source Current (Body Diode) | IS | 36 A | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 18 mJ | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 3.5 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 45 | °C/W |
Key Features
- Low RDS(on) to minimize conduction losses
- High current capability of up to 22 A
- Avalanche energy specified for robust operation
- AEC-Q101 qualified and PPAP capable, ensuring automotive-grade reliability
- Pb-free, halogen-free, and RoHS compliant packaging
- High gate threshold voltage for improved noise immunity
- Low gate-to-source leakage current
Applications
The NVD5867NLT4G is suitable for a wide range of applications, including:
- Automotive systems such as power steering, power windows, and fuel pumps
- Industrial power supplies and motor control systems
- DC-DC converters and power management systems
- High-power switching and power amplification
Q & A
- What is the maximum drain-to-source voltage of the NVD5867NLT4G? The maximum drain-to-source voltage is 60 V.
- What is the continuous drain current at 25°C and 100°C? The continuous drain current is 22 A at 25°C and 16 A at 100°C.
- What is the typical on-resistance (RDS(on)) at 10 V and 4.5 V? The typical RDS(on) is 39 mΩ at 10 V and 50 mΩ at 4.5 V.
- Is the NVD5867NLT4G AEC-Q101 qualified? Yes, the NVD5867NLT4G is AEC-Q101 qualified and PPAP capable.
- What is the junction-to-case thermal resistance? The junction-to-case thermal resistance (RθJC) is 3.5 °C/W.
- What is the maximum pulse drain current? The maximum pulse drain current (IDM) is 85 A.
- What is the operating junction and storage temperature range? The operating junction and storage temperature range is −55 to 175 °C.
- Is the NVD5867NLT4G RoHS compliant? Yes, the NVD5867NLT4G is Pb-free, halogen-free, and RoHS compliant.
- What is the single pulse drain-to-source avalanche energy? The single pulse drain-to-source avalanche energy (EAS) is 18 mJ.
- What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C.
