Overview
The NVD5867NLT4G-TB01 is a high-performance power MOSFET manufactured by ON Semiconductor. This device is designed to operate as a single N-channel MOSFET with a drain-to-source voltage (VDSS) of 60V and a continuous drain current (ID) of up to 22A at 25°C. It is packaged in a DPAK-3 configuration, which is Pb-free, halogen-free, and RoHS compliant. The NVD5867NLT4G-TB01 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 22 | A |
| Continuous Drain Current (TC = 100°C) | ID | 16 | A |
| Power Dissipation (TC = 25°C) | PD | 43 | W |
| Power Dissipation (TC = 100°C) | PD | 21 | W |
| Drain-to-Source On Resistance | RDS(on) | 39 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 2.5 | V |
Key Features
- Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
- High Current Capability: Supports up to 22A of continuous drain current at 25°C.
- Avalanche Energy Specified: Ensures robust performance under transient conditions.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other high-reliability applications.
- Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Automotive Systems: Ideal for use in automotive powertrain, body, and chassis applications due to its AEC-Q101 qualification.
- Industrial Power Supplies: Suitable for high-current switching applications in industrial power supplies.
- Motor Control: Used in motor control circuits for efficient and reliable operation.
- Power Management: Applicable in various power management systems requiring high current handling and low on-resistance.
Q & A
- What is the maximum drain-to-source voltage of the NVD5867NLT4G-TB01?
The maximum drain-to-source voltage (VDSS) is 60V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is up to 22A.
- Is the NVD5867NLT4G-TB01 RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What is the typical on-resistance of the NVD5867NLT4G-TB01?
The typical drain-to-source on resistance (RDS(on)) is 39 mΩ.
- What are the key features of the NVD5867NLT4G-TB01?
Key features include low RDS(on), high current capability, avalanche energy specification, and AEC-Q101 qualification.
- What package type is the NVD5867NLT4G-TB01 available in?
The device is packaged in a DPAK-3 configuration.
- Is the NVD5867NLT4G-TB01 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- What is the gate threshold voltage range of the NVD5867NLT4G-TB01?
The gate threshold voltage (VGS(TH)) range is from 1.5V to 2.5V.
- What are some typical applications of the NVD5867NLT4G-TB01?
Typical applications include automotive systems, industrial power supplies, motor control, and power management systems.
- Where can I find detailed specifications and datasheets for the NVD5867NLT4G-TB01?
Detailed specifications and datasheets can be found on the ON Semiconductor website or through authorized distributors like Mouser Electronics.
