NVD5865NLT4G
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onsemi NVD5865NLT4G

Manufacturer No:
NVD5865NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 10A/46A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5865NLT4G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance, high current capability, and robust thermal performance, making it suitable for a variety of power management and switching applications. The NVD5865NLT4G is housed in a DPAK (TO-252) package, which is Pb-free, halogen-free, and RoHS compliant.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 46 A
Continuous Drain Current (TC = 100°C) ID 33 A
Power Dissipation (TC = 25°C) PD 71 W
Power Dissipation (TC = 100°C) PD 36 W
Pulsed Drain Current (TA = 25°C, tp = 10 µs) IDM 203 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 19 A) RDS(on) 13-16
Gate Threshold Voltage VGS(TH) 1.0-2.0 V
Operating Junction and Storage Temperature TJ, Tstg -55 to 175 °C
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • High Current Capability: Supports up to 46 A continuous drain current at 25°C.
  • Avalanche Energy Specified: Ensures robust performance under transient conditions.
  • AEC-Q101 Qualified: Meets automotive industry standards for reliability and performance.
  • Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly packaging.
  • High Thermal Performance: Low thermal resistance and high power dissipation capabilities.

Applications

  • Automotive Systems: Suitable for various automotive applications due to AEC-Q101 qualification.
  • Power Management: Ideal for DC-DC converters, power supplies, and other power management circuits.
  • Motor Control: Used in motor drive applications requiring high current and low on-resistance.
  • Switching Applications: Applicable in high-frequency switching circuits such as inverters and switching power supplies.

Q & A

  1. What is the maximum drain-to-source voltage of the NVD5865NLT4G?

    The maximum drain-to-source voltage is 60 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current at 25°C is 46 A.

  3. Is the NVD5865NLT4G AEC-Q101 qualified?

    Yes, the NVD5865NLT4G is AEC-Q101 qualified.

  4. What is the typical on-resistance at VGS = 10 V and ID = 19 A?

    The typical on-resistance is 13-16 mΩ.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 175°C.

  6. Is the package Pb-free and RoHS compliant?

    Yes, the package is Pb-free, halogen-free, and RoHS compliant.

  7. What is the maximum power dissipation at 25°C?

    The maximum power dissipation at 25°C is 71 W.

  8. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0-2.0 V.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  10. What are some common applications of the NVD5865NLT4G?

    Common applications include automotive systems, power management, motor control, and switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5865NLT4G NVD5867NLT4G NVD5863NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 46A (Tc) 6A (Ta), 22A (Tc) 14.9A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 19A, 10V 39mOhm @ 11A, 10V 7.1mOhm @ 41A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 15 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 675 pF @ 25 V 3850 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 71W (Tc) 3.3W (Ta), 43W (Tc) 3.1W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK-3 DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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