NVD5865NLT4G
  • Share:

onsemi NVD5865NLT4G

Manufacturer No:
NVD5865NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 10A/46A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5865NLT4G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance, high current capability, and robust thermal performance, making it suitable for a variety of power management and switching applications. The NVD5865NLT4G is housed in a DPAK (TO-252) package, which is Pb-free, halogen-free, and RoHS compliant.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 46 A
Continuous Drain Current (TC = 100°C) ID 33 A
Power Dissipation (TC = 25°C) PD 71 W
Power Dissipation (TC = 100°C) PD 36 W
Pulsed Drain Current (TA = 25°C, tp = 10 µs) IDM 203 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 19 A) RDS(on) 13-16
Gate Threshold Voltage VGS(TH) 1.0-2.0 V
Operating Junction and Storage Temperature TJ, Tstg -55 to 175 °C
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • High Current Capability: Supports up to 46 A continuous drain current at 25°C.
  • Avalanche Energy Specified: Ensures robust performance under transient conditions.
  • AEC-Q101 Qualified: Meets automotive industry standards for reliability and performance.
  • Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly packaging.
  • High Thermal Performance: Low thermal resistance and high power dissipation capabilities.

Applications

  • Automotive Systems: Suitable for various automotive applications due to AEC-Q101 qualification.
  • Power Management: Ideal for DC-DC converters, power supplies, and other power management circuits.
  • Motor Control: Used in motor drive applications requiring high current and low on-resistance.
  • Switching Applications: Applicable in high-frequency switching circuits such as inverters and switching power supplies.

Q & A

  1. What is the maximum drain-to-source voltage of the NVD5865NLT4G?

    The maximum drain-to-source voltage is 60 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current at 25°C is 46 A.

  3. Is the NVD5865NLT4G AEC-Q101 qualified?

    Yes, the NVD5865NLT4G is AEC-Q101 qualified.

  4. What is the typical on-resistance at VGS = 10 V and ID = 19 A?

    The typical on-resistance is 13-16 mΩ.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 175°C.

  6. Is the package Pb-free and RoHS compliant?

    Yes, the package is Pb-free, halogen-free, and RoHS compliant.

  7. What is the maximum power dissipation at 25°C?

    The maximum power dissipation at 25°C is 71 W.

  8. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0-2.0 V.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  10. What are some common applications of the NVD5865NLT4G?

    Common applications include automotive systems, power management, motor control, and switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
549

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NVD5865NLT4G NVD5867NLT4G NVD5863NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 46A (Tc) 6A (Ta), 22A (Tc) 14.9A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 19A, 10V 39mOhm @ 11A, 10V 7.1mOhm @ 41A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 15 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 675 pF @ 25 V 3850 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 71W (Tc) 3.3W (Ta), 43W (Tc) 3.1W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK-3 DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC