Overview
The NVD5863NLT4G-VF01 is a high-performance N-channel power MOSFET produced by onsemi. This device is designed for reliable power management applications, particularly in automotive systems, and is AEC-Q101 qualified. It features a low on-resistance (Rds(on)) to minimize conduction losses and high current capability, making it suitable for a variety of power management tasks. The MOSFET is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Part Number | NVD5863NLT4G-VF01 | |
| Description | MOSFET N-CH 60V 14.9A DPAK | |
| Drain to Source Voltage (Vdss) | 60 V | V |
| Continuous Drain Current (Id) @ 25°C | 14.9 A (Ta), 82 A (Tc) | A |
| Gate to Source Voltage (Vgs) | ±20 V | V |
| Power Dissipation (Max) | 3.1 W (Ta), 96 W (Tc) | W |
| On-Resistance (Rds(on)) @ Id, Vgs | 7.1 mΩ @ 41 A, 10 V | mΩ |
| Gate Threshold Voltage (Vgs(th)) @ Id | 3 V @ 250 µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V | pF |
| Operating Temperature | -55°C ~ 175°C (TJ) | °C |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
| Mounting Type | Surface Mount |
Key Features
- Low Rds(on): Minimizes conduction losses, ensuring efficient power management.
- High Current Capability: Supports up to 82 A at Tc and 14.9 A at Ta, making it suitable for high-power applications.
- Avalanche Energy Specified: Provides robust protection against voltage spikes and surges.
- AEC-Q101 Qualified: Meets stringent automotive standards for reliability and performance.
- Lead-Free, Halogen-Free, and RoHS Compliant: Ensures environmental sustainability and regulatory compliance.
- Wide Operating Temperature Range: Operates from -55°C to 175°C, suitable for various environmental conditions.
Applications
The NVD5863NLT4G-VF01 is primarily used in automotive and industrial power management systems. It is suitable for applications such as:
- Automotive power systems, including battery management and motor control.
- Industrial power supplies and DC-DC converters.
- High-power switching applications requiring low on-resistance and high current capability.
- Power management in electric vehicles and hybrid vehicles.
Q & A
- Q: What is the maximum drain-to-source voltage (Vdss) of the NVD5863NLT4G-VF01?
A: The maximum drain-to-source voltage (Vdss) is 60 V.
- Q: What is the continuous drain current (Id) at 25°C?
A: The continuous drain current (Id) at 25°C is 14.9 A (Ta) and 82 A (Tc).
- Q: What is the on-resistance (Rds(on)) of the MOSFET?
A: The on-resistance (Rds(on)) is 7.1 mΩ at 41 A and 10 V.
- Q: Is the NVD5863NLT4G-VF01 RoHS compliant?
A: Yes, the NVD5863NLT4G-VF01 is lead-free, halogen-free, and RoHS compliant.
- Q: What is the operating temperature range of the MOSFET?
A: The operating temperature range is from -55°C to 175°C (TJ).
- Q: What package type is the NVD5863NLT4G-VF01 available in?
A: The MOSFET is available in the TO-252-3, DPAK (2 Leads + Tab), SC-63 package.
- Q: Is the NVD5863NLT4G-VF01 suitable for automotive applications?
A: Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
- Q: What is the gate threshold voltage (Vgs(th)) of the MOSFET?
A: The gate threshold voltage (Vgs(th)) is 3 V at 250 µA.
- Q: How much gate charge (Qg) does the MOSFET require?
A: The gate charge (Qg) is 70 nC at 10 V.
- Q: What is the input capacitance (Ciss) of the MOSFET?
A: The input capacitance (Ciss) is 3850 pF at 25 V.
