Overview
The NTMFS4C10NT1G is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET is packaged in an SO-8 FL (Flat Lead) case, making it suitable for surface-mounting on FR4 boards. The device is characterized by its low on-resistance (RDS(on)), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 15.0 | A |
| Continuous Drain Current (TA = 80°C) | ID | 11.2 | A |
| Power Dissipation (TA = 25°C) | PD | 2.49 | W |
| Pulsed Drain Current (tp = 10 μs, TA = 25°C) | IDM | 340 | A |
| Operating Junction and Storage Temperature Range | TJ, TSTG | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 5.8 - 6.95 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| Total Gate Charge (VGS = 10 V, VDS = 15 V, ID = 30 A) | QG(TOT) | 18.6 | nC |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High current capability with a maximum pulsed drain current of 340 A
- Wide operating junction and storage temperature range from −55°C to +150°C
- Low gate threshold voltage and high forward transconductance
Applications
- CPU Power Delivery
- DC-DC Converters
- Power Management Systems
- High-Current Switching Applications
- Aerospace and Automotive Systems requiring high reliability and environmental compliance
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C10NT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current rating at 25°C and 80°C?
The continuous drain current (ID) is 15.0 A at 25°C and 11.2 A at 80°C.
- What is the power dissipation rating at 25°C?
The power dissipation (PD) is 2.49 W at 25°C.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 340 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from −55°C to +150°C.
- What are the key features of the NTMFS4C10NT1G MOSFET?
The key features include low RDS(on), low capacitance, optimized gate charge, and environmental compliance (Pb-free, halogen-free, and RoHS compliant).
- In what applications is the NTMFS4C10NT1G typically used?
Typical applications include CPU power delivery, DC-DC converters, power management systems, and high-current switching applications.
- What is the gate threshold voltage range of the NTMFS4C10NT1G?
The gate threshold voltage (VGS(TH)) range is from 1.3 V to 2.2 V.
- What is the total gate charge at VGS = 10 V and ID = 30 A?
The total gate charge (QG(TOT)) is 18.6 nC at VGS = 10 V and ID = 30 A.
- Is the NTMFS4C10NT1G suitable for high-reliability applications?
Yes, it is suitable for high-reliability applications due to its robust specifications and environmental compliance.
