NTMFS4C10NT1G
  • Share:

onsemi NTMFS4C10NT1G

Manufacturer No:
NTMFS4C10NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 8.2A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C10NT1G is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET is packaged in an SO-8 FL (Flat Lead) case, making it suitable for surface-mounting on FR4 boards. The device is characterized by its low on-resistance (RDS(on)), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 15.0 A
Continuous Drain Current (TA = 80°C) ID 11.2 A
Power Dissipation (TA = 25°C) PD 2.49 W
Pulsed Drain Current (tp = 10 μs, TA = 25°C) IDM 340 A
Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 5.8 - 6.95
Gate Threshold Voltage VGS(TH) 1.3 - 2.2 V
Total Gate Charge (VGS = 10 V, VDS = 15 V, ID = 30 A) QG(TOT) 18.6 nC

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • High current capability with a maximum pulsed drain current of 340 A
  • Wide operating junction and storage temperature range from −55°C to +150°C
  • Low gate threshold voltage and high forward transconductance

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Power Management Systems
  • High-Current Switching Applications
  • Aerospace and Automotive Systems requiring high reliability and environmental compliance

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C10NT1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current rating at 25°C and 80°C?

    The continuous drain current (ID) is 15.0 A at 25°C and 11.2 A at 80°C.

  3. What is the power dissipation rating at 25°C?

    The power dissipation (PD) is 2.49 W at 25°C.

  4. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 340 A for a pulse width of 10 μs.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is from −55°C to +150°C.

  6. What are the key features of the NTMFS4C10NT1G MOSFET?

    The key features include low RDS(on), low capacitance, optimized gate charge, and environmental compliance (Pb-free, halogen-free, and RoHS compliant).

  7. In what applications is the NTMFS4C10NT1G typically used?

    Typical applications include CPU power delivery, DC-DC converters, power management systems, and high-current switching applications.

  8. What is the gate threshold voltage range of the NTMFS4C10NT1G?

    The gate threshold voltage (VGS(TH)) range is from 1.3 V to 2.2 V.

  9. What is the total gate charge at VGS = 10 V and ID = 30 A?

    The total gate charge (QG(TOT)) is 18.6 nC at VGS = 10 V and ID = 30 A.

  10. Is the NTMFS4C10NT1G suitable for high-reliability applications?

    Yes, it is suitable for high-reliability applications due to its robust specifications and environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:987 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):750mW (Ta), 23.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$1.42
363

Please send RFQ , we will respond immediately.

Same Series
NTMFS4C10NT1G-001
NTMFS4C10NT1G-001
MOSFET N-CH 30V 8.2A/46A 5DFN

Similar Products

Part Number NTMFS4C10NT1G NTMFS4C50NT1G NTMFS4C13NT1G NTMFS4C10NT3G NTMFS4C10NBT1G
Manufacturer onsemi Sanyo onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type N-Channel - N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) 21.7A (Ta) 7.2A (Ta), 38A (Tc) 46A (Tc) 16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.95mOhm @ 30A, 10V - 9.1mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA - 2.1V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 4.5 V - 15.2 nC @ 10 V 9.7 nC @ 4.5 V 18.6 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V - 770 pF @ 15 V 987 pF @ 15 V 987 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 750mW (Ta), 23.6W (Tc) - 750mW (Ta) 750mW (Ta) 2.51W (Ta), 23.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5