Overview
The NTMFS4C10NT1G-001 is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET is housed in an SO-8 FL (Flat Lead) package, making it suitable for surface-mount technology. The device is characterized by its low on-resistance, low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 15.0 | A |
| Continuous Drain Current (TJ = 80°C) | ID | 11.2 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | 340 | A |
| Power Dissipation (TJ = 25°C) | PD | 2.49 | W |
| Junction-to-Case Thermal Resistance | RJC | 5.3 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State) | RJA | 50.3 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 5.8 - 6.95 mΩ | mΩ |
| Input Capacitance | CISS | 987 pF | pF |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +150 °C | °C |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High current capability with a maximum pulsed drain current of 340 A
- High thermal performance with a junction-to-case thermal resistance of 5.3 °C/W
Applications
- CPU power delivery
- DC-DC converters
- High-power switching applications
- Power management systems
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C10NT1G-001 MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 80°C?
The continuous drain current is 15.0 A at 25°C and 11.2 A at 80°C.
- What is the pulsed drain current for a pulse width of 10 μs?
The pulsed drain current (IDM) is 340 A for a pulse width of 10 μs.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RJC) is 5.3 °C/W.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.3 to 2.2 V.
- What are the typical applications of the NTMFS4C10NT1G-001 MOSFET?
Typical applications include CPU power delivery, DC-DC converters, and high-power switching applications.
- Is the NTMFS4C10NT1G-001 MOSFET RoHS compliant?
Yes, the NTMFS4C10NT1G-001 MOSFET is Pb-free, halogen-free, and RoHS compliant.
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
- What is the input capacitance of the MOSFET?
The input capacitance (CISS) is 987 pF.
- What is the typical on-resistance at VGS = 10 V and ID = 30 A?
The typical on-resistance (RDS(on)) is 5.8 to 6.95 mΩ at VGS = 10 V and ID = 30 A.
