NTMFS4C10NBT1G
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onsemi NTMFS4C10NBT1G

Manufacturer No:
NTMFS4C10NBT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 16.4A/46A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C10NBT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance (Rds(on)) and minimal switching losses, making it ideal for various high-power applications. The MOSFET features a 30V drain-to-source voltage rating and can handle continuous drain currents of up to 16.4A at 25°C and 46A at the case temperature. It is packaged in an 8-PowerTDFN, 5-lead configuration, which is surface mountable and RoHS compliant.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (Vdss)30V
Gate-to-Source Voltage (Vgs)±20V
Continuous Drain Current (Id) @ 25°C16.4A
Continuous Drain Current (Id) @ Case Temperature46A
On-Resistance (Rds(on)) @ Id, Vgs6.95 mΩ @ 30A, 10V
Gate Charge (Qg) @ Vgs18.6 nC @ 10 VnC
Input Capacitance (Ciss) @ Vds987 pF @ 15 VpF
Power Dissipation (Max)2.51 W (Ta), 23.6 W (Tc)W
Operating Temperature-55°C ~ 150°C (TJ)°C
Mounting TypeSurface Mount
Package / Case8-PowerTDFN, 5 Leads

Key Features

  • Low Rds(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • Wide operating temperature range: -55°C to 150°C
  • High continuous drain current capability

Applications

  • CPU power delivery
  • DC-DC converters
  • Other high-power switching applications requiring low on-resistance and high efficiency

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C10NBT1G MOSFET?
    The maximum drain-to-source voltage (Vdss) is 30 V.
  2. What is the continuous drain current rating at 25°C and case temperature?
    The continuous drain current is 16.4 A at 25°C and 46 A at case temperature.
  3. What is the on-resistance (Rds(on)) of the MOSFET?
    The on-resistance (Rds(on)) is 6.95 mΩ at 30 A and 10 V.
  4. Is the NTMFS4C10NBT1G MOSFET RoHS compliant?
    Yes, the MOSFET is Pb-free, halogen-free, and RoHS compliant.
  5. What is the operating temperature range of the NTMFS4C10NBT1G?
    The operating temperature range is -55°C to 150°C.
  6. What is the typical gate charge (Qg) of the MOSFET?
    The typical gate charge (Qg) is 18.6 nC at 10 V.
  7. What are the common applications of the NTMFS4C10NBT1G MOSFET?
    Common applications include CPU power delivery and DC-DC converters.
  8. What is the package type of the NTMFS4C10NBT1G MOSFET?
    The package type is 8-PowerTDFN with 5 leads.
  9. What is the maximum power dissipation of the MOSFET?
    The maximum power dissipation is 2.51 W at ambient temperature and 23.6 W at case temperature.
  10. Is the NTMFS4C10NBT1G suitable for surface mounting?
    Yes, the MOSFET is designed for surface mounting.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:987 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.51W (Ta), 23.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS4C10NBT1G NTMFS4C10NT1G NTMFS4C10NBT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 46A (Tc) 8.2A (Ta) 16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.95mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V 9.7 nC @ 4.5 V 18.6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V 987 pF @ 15 V 987 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.51W (Ta), 23.6W (Tc) 750mW (Ta), 23.6W (Tc) 2.51W (Ta), 23.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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