NTMFS4C05NT1G-001
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onsemi NTMFS4C05NT1G-001

Manufacturer No:
NTMFS4C05NT1G-001
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11.9A/78A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C05NT1G-001 is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET is housed in an SO-8FL package and is known for its low on-resistance and optimized gate charge, which minimize conduction and switching losses. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 21.7 A
Continuous Drain Current (TA = 80°C) ID 16.3 A
Power Dissipation (TA = 25°C) PD 2.57 W
Pulsed Drain Current (tp = 10 μs) IDM 174 A
Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 2.7 - 3.4 mΩ
Gate Threshold Voltage VGS(TH) 1.3 - 2.2 V
Input Capacitance CISS 1972 pF
Output Capacitance COSS 1215 pF
Reverse Transfer Capacitance CRSS 59 pF

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • High current capability with a maximum drain current of 78 A
  • High pulse current capability up to 174 A
  • Wide operating junction and storage temperature range from −55°C to +150°C

Applications

  • CPU power delivery
  • DC-DC converters
  • Power management systems
  • High-power switching applications
  • Automotive and industrial power systems

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C05NT1G-001 MOSFET?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current at 25°C and 80°C?

    The continuous drain current is 21.7 A at 25°C and 16.3 A at 80°C.

  3. What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 30 A?

    The typical on-resistance is 2.7 to 3.4 mΩ.

  4. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.3 to 2.2 V.

  5. Is the NTMFS4C05NT1G-001 MOSFET RoHS compliant?
  6. What are the typical applications of the NTMFS4C05NT1G-001 MOSFET?

    The typical applications include CPU power delivery, DC-DC converters, power management systems, and high-power switching applications.

  7. What is the maximum pulse current capability of the MOSFET?

    The maximum pulse current capability is up to 174 A for a pulse width of 10 μs.

  8. What is the operating junction and storage temperature range of the MOSFET?

    The operating junction and storage temperature range is from −55°C to +150°C.

  9. What is the input capacitance of the MOSFET?

    The input capacitance is 1972 pF.

  10. What is the reverse transfer capacitance of the MOSFET?

    The reverse transfer capacitance is 59 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.9A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1972 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS4C05NT1G-001 NTMFS4C06NT1G-001 NTMFS4C09NT1G-001 NTMFS4C08NT1G-001
Manufacturer onsemi onsemi onsemi onsemi
Product Status Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11.9A (Ta), 78A (Tc) 11A (Ta), 69A (Tc) 9A (Ta), 52A (Tc) 9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5.8mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V 26 nC @ 10 V 22.2 nC @ 10 V 18.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1972 pF @ 15 V 1683 pF @ 15 V 1252 pF @ 15 V 1670 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 770mW (Ta) 770mW (Ta) 760mW (Ta) 760mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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