NTMFS4C08NT1G-001
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onsemi NTMFS4C08NT1G-001

Manufacturer No:
NTMFS4C08NT1G-001
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9A/52A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C08NT1G-001 is a single N-Channel MOSFET produced by onsemi. Although this device is currently discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance. The MOSFET is known for its high current and voltage handling capabilities, making it suitable for various power management applications.

Key Specifications

ParameterValue
Mounting StyleSMD/SMT
Package / CaseSO-8FL / 8-PowerTDFN, 5 Leads
Transistor PolarityN-Channel
Number of Channels1 Channel
Maximum Drain-Source Voltage (Vds)30 V
Maximum Continuous Drain Current (Id)9 A (Ta), 52 A (Tc)
Power Dissipation (Pd)760 mW (Ta)

Key Features

  • High current handling capability up to 52 A (Tc) and 9 A (Ta).
  • Maximum drain-source voltage of 30 V.
  • Compact SO-8FL and 8-PowerTDFN packages with 5 leads.
  • Surface mount design for easy integration into SMD/SMT systems.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The NTMFS4C08NT1G-001 MOSFET is suitable for a variety of power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power systems.

Q & A

  1. What is the maximum drain-source voltage of the NTMFS4C08NT1G-001 MOSFET?
    The maximum drain-source voltage is 30 V.
  2. What is the maximum continuous drain current of the NTMFS4C08NT1G-001 MOSFET?
    The maximum continuous drain current is 9 A (Ta) and 52 A (Tc).
  3. What is the package type of the NTMFS4C08NT1G-001 MOSFET?
    The package types are SO-8FL and 8-PowerTDFN with 5 leads.
  4. Is the NTMFS4C08NT1G-001 MOSFET RoHS compliant?
    Yes, the NTMFS4C08NT1G-001 MOSFET is RoHS compliant.
  5. What are the typical applications of the NTMFS4C08NT1G-001 MOSFET?
    Typical applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and automotive and industrial power systems.
  6. Why is the NTMFS4C08NT1G-001 MOSFET not recommended for new designs?
    The NTMFS4C08NT1G-001 MOSFET is discontinued and not recommended for new designs; users should contact onsemi for alternative recommendations.
  7. What is the power dissipation of the NTMFS4C08NT1G-001 MOSFET?
    The power dissipation is 760 mW (Ta).
  8. What is the mounting style of the NTMFS4C08NT1G-001 MOSFET?
    The mounting style is SMD/SMT.
  9. How many channels does the NTMFS4C08NT1G-001 MOSFET have?
    The NTMFS4C08NT1G-001 MOSFET has 1 channel.
  10. Where can I find detailed specifications and datasheets for the NTMFS4C08NT1G-001 MOSFET?
    Detailed specifications and datasheets can be found on the onsemi official website, as well as through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):760mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NTMFS4C08NT3G
NTMFS4C08NT3G
MOSFET N-CH 30V 9A/52A 5DFN
NTMFS4C08NT1G-001
NTMFS4C08NT1G-001
MOSFET N-CH 30V 9A/52A 5DFN

Similar Products

Part Number NTMFS4C08NT1G-001 NTMFS4C09NT1G-001 NTMFS4C05NT1G-001 NTMFS4C06NT1G-001
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc) 9A (Ta), 52A (Tc) 11.9A (Ta), 78A (Tc) 11A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 18A, 10V 5.8mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V 22.2 nC @ 10 V 14 nC @ 4.5 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 15 V 1252 pF @ 15 V 1972 pF @ 15 V 1683 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 760mW (Ta) 760mW (Ta) 770mW (Ta) 770mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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