NTMFS4C06NT1G-001
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onsemi NTMFS4C06NT1G-001

Manufacturer No:
NTMFS4C06NT1G-001
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11A/69A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C06NT1G-001 is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET is housed in an SO-8 FL (Flat Lead) package and is known for its low on-resistance and optimized gate charge, which minimize conduction and switching losses. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 20.0 A
Continuous Drain Current (TA = 80°C) ID 14.9 A
Power Dissipation (TA = 25°C) PD 2.55 W
Pulsed Drain Current (tp = 10 μs) IDM 476 A
Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 3.2 - 4.0
Gate Threshold Voltage VGS(TH) 1.3 - 2.1 V
Total Gate Charge (VGS = 10 V, VDS = 15 V; ID = 30 A) QG(TOT) 26 nC

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • High current capability with a maximum pulsed drain current of 476 A
  • Wide operating junction and storage temperature range from −55°C to +150°C

Applications

  • CPU power delivery
  • DC-DC converters
  • High-power switching applications
  • Power management systems

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C06NT1G-001 MOSFET?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current at 25°C and 80°C?

    The continuous drain current is 20.0 A at 25°C and 14.9 A at 80°C.

  3. What is the power dissipation at 25°C?

    The power dissipation is 2.55 W at 25°C.

  4. What is the maximum pulsed drain current?

    The maximum pulsed drain current is 476 A for a pulse width of 10 μs.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is from −55°C to +150°C.

  6. What is the typical on-resistance at VGS = 10 V and ID = 30 A?

    The typical on-resistance is 3.2 - 4.0 mΩ.

  7. Is the NTMFS4C06NT1G-001 MOSFET RoHS compliant?
  8. What are some typical applications of the NTMFS4C06NT1G-001 MOSFET?

    Typical applications include CPU power delivery, DC-DC converters, and high-power switching applications.

  9. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.3 - 2.1 V.

  10. What is the total gate charge at VGS = 10 V and ID = 30 A?

    The total gate charge is 26 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1683 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

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Same Series
NTMFS4C06NT3G
NTMFS4C06NT3G
MOSFET N-CH 30V 11A/69A 5DFN
NTMFS4C06NT1G-001
NTMFS4C06NT1G-001
MOSFET N-CH 30V 11A/69A 5DFN

Similar Products

Part Number NTMFS4C06NT1G-001 NTMFS4C09NT1G-001 NTMFS4C08NT1G-001 NTMFS4C05NT1G-001
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 69A (Tc) 9A (Ta), 52A (Tc) 9A (Ta), 52A (Tc) 11.9A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V 5.8mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 22.2 nC @ 10 V 18.2 nC @ 10 V 14 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V 1252 pF @ 15 V 1670 pF @ 15 V 1972 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 770mW (Ta) 760mW (Ta) 760mW (Ta) 770mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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