Overview
The NTMFS4C06NT1G-001 is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET is housed in an SO-8 FL (Flat Lead) package and is known for its low on-resistance and optimized gate charge, which minimize conduction and switching losses. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 30 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Continuous Drain Current (TA = 25°C) | ID | 20.0 | A |
Continuous Drain Current (TA = 80°C) | ID | 14.9 | A |
Power Dissipation (TA = 25°C) | PD | 2.55 | W |
Pulsed Drain Current (tp = 10 μs) | IDM | 476 | A |
Operating Junction and Storage Temperature Range | TJ, TSTG | −55 to +150 | °C |
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 3.2 - 4.0 | mΩ |
Gate Threshold Voltage | VGS(TH) | 1.3 - 2.1 | V |
Total Gate Charge (VGS = 10 V, VDS = 15 V; ID = 30 A) | QG(TOT) | 26 | nC |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High current capability with a maximum pulsed drain current of 476 A
- Wide operating junction and storage temperature range from −55°C to +150°C
Applications
- CPU power delivery
- DC-DC converters
- High-power switching applications
- Power management systems
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C06NT1G-001 MOSFET?
The maximum drain-to-source voltage is 30 V.
- What is the continuous drain current at 25°C and 80°C?
The continuous drain current is 20.0 A at 25°C and 14.9 A at 80°C.
- What is the power dissipation at 25°C?
The power dissipation is 2.55 W at 25°C.
- What is the maximum pulsed drain current?
The maximum pulsed drain current is 476 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from −55°C to +150°C.
- What is the typical on-resistance at VGS = 10 V and ID = 30 A?
The typical on-resistance is 3.2 - 4.0 mΩ.
- Is the NTMFS4C06NT1G-001 MOSFET RoHS compliant?
- What are some typical applications of the NTMFS4C06NT1G-001 MOSFET?
Typical applications include CPU power delivery, DC-DC converters, and high-power switching applications.
- What is the gate threshold voltage range?
The gate threshold voltage range is 1.3 - 2.1 V.
- What is the total gate charge at VGS = 10 V and ID = 30 A?
The total gate charge is 26 nC.