Overview
The NTMFS4C09NT1G is a single N-channel power MOSFET produced by onsemi. This device is packaged in an SO-8FL (flat lead) case and is designed for high-performance applications. Although it is currently discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance. The MOSFET features low RDS(on) to minimize conduction losses, low capacitance to minimize driver losses, and optimized gate charge to minimize switching losses. It is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 16.4 | A |
| Continuous Drain Current (TA = 80°C) | ID | 12.3 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | 146 | A |
| Power Dissipation (TA = 25°C, steady state) | PD | 2.51 | W |
| Power Dissipation (TA = 25°C, t ≤ 10 s) | PD | 6.0 | W |
| Junction-to-Case Thermal Resistance | RθJC | 4.9 | °C/W |
| Junction-to-Ambient Thermal Resistance (steady state) | RθJA | 49.8 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.1 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 4.6 - 5.8 mΩ | mΩ |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- High current capability with a maximum drain current of 52 A
- High pulse current handling with a maximum pulsed drain current of 146 A
- Low forward diode voltage and fast reverse recovery time
- High thermal performance with various thermal resistance ratings
Applications
- CPU power delivery
- DC-DC converters
- High-power switching applications
- Power management systems
- Automotive and industrial power systems
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C09NT1G?
The maximum drain-to-source voltage is 30 V.
- What is the continuous drain current at 25°C and 80°C?
The continuous drain current is 16.4 A at 25°C and 12.3 A at 80°C.
- What is the maximum pulsed drain current?
The maximum pulsed drain current is 146 A for a pulse width of 10 μs.
- What are the thermal resistance values for this MOSFET?
The junction-to-case thermal resistance is 4.9 °C/W, and the junction-to-ambient thermal resistance is 49.8 °C/W for steady state conditions.
- What is the gate threshold voltage range?
The gate threshold voltage range is 1.3 to 2.1 V.
- What are the typical applications of the NTMFS4C09NT1G?
Typical applications include CPU power delivery, DC-DC converters, high-power switching applications, power management systems, and automotive and industrial power systems.
- Is the NTMFS4C09NT1G RoHS compliant?
Yes, the NTMFS4C09NT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
- What is the forward diode voltage at 25°C and 125°C?
The forward diode voltage is 0.79 to 1.1 V at 25°C and 0.65 V at 125°C.
- Is the NTMFS4C09NT1G recommended for new designs?
No, the NTMFS4C09NT1G is discontinued and not recommended for new designs. Please contact an onsemi representative for information on alternative devices.
