NTF3055-100T1
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onsemi NTF3055-100T1

Manufacturer No:
NTF3055-100T1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055-100T1 is a power MOSFET from onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is packaged in a SOT-223 case and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is known for its high current handling capability and low on-resistance, making it an efficient choice for various power management needs.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate Voltage (RGS = 10 MΩ)VDGR60Vdc
Gate-to-Source Voltage - ContinuousVGS±20Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms)VGS±30Vdc
Continuous Drain Current @ TA = 25°CID3.0Adc
Continuous Drain Current @ TA = 100°CID1.4Adc
Single Pulse Drain Current (tp ≤ 10 μs)IDM9.0Apk
Total Power Dissipation @ TA = 25°CPD2.1W
Operating and Storage Temperature RangeTJ, Tstg-55 to 175°C
Gate Threshold VoltageVGS(th)2.0 - 3.0Vdc
Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.5 Adc)RDS(on)88 - 110
Input Capacitance (VDS = 25 Vdc, VGS = 0 V, f = 1.0 MHz)Ciss324 - 455pF
Turn-On Delay Time (VDD = 30 Vdc, ID = 3.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω)td(on)9.4 - 20ns

Key Features

  • Pb-Free and RoHS compliant packages available.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Low on-resistance (RDS(on) = 88 - 110 mΩ at VGS = 10 Vdc, ID = 1.5 Adc).
  • High speed switching capabilities.
  • Low gate threshold voltage (VGS(th) = 2.0 - 3.0 Vdc).
  • High current handling (ID = 3.0 Adc continuous at TA = 25°C).

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTF3055-100T1?
    The maximum drain-to-source voltage is 60 Vdc.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is 3.0 Adc.
  3. Is the NTF3055-100T1 Pb-Free and RoHS compliant?
    Yes, the NTF3055-100T1 is available in Pb-Free and RoHS compliant packages.
  4. What are the typical applications for the NTF3055-100T1?
    The typical applications include power supplies, converters, power motor controls, and bridge circuits.
  5. What is the gate threshold voltage range of the NTF3055-100T1?
    The gate threshold voltage range is 2.0 - 3.0 Vdc.
  6. What is the static drain-to-source on-resistance at VGS = 10 Vdc and ID = 1.5 Adc?
    The static drain-to-source on-resistance is 88 - 110 mΩ.
  7. What is the operating and storage temperature range for the NTF3055-100T1?
    The operating and storage temperature range is -55 to 175°C.
  8. What is the turn-on delay time for the NTF3055-100T1 under specified conditions?
    The turn-on delay time is 9.4 - 20 ns.
  9. Is the NTF3055-100T1 AEC-Q101 qualified?
    Yes, the NTF3055-100T1 is AEC-Q101 qualified.
  10. What is the maximum lead temperature for soldering purposes?
    The maximum lead temperature for soldering purposes is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055-100T1G
NTF3055-100T1G
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3LF
NTF3055-100T3LF
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3G
NTF3055-100T3G
MOSFET N-CH 60V 3A SOT223
NVF3055-100T1G
NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055-100T1 NTF3055-100T1G NTF3055-160T1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.5A, 10V 110mOhm @ 1.5A, 10V 160mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V 455 pF @ 25 V 280 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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