NTF3055-100T3LF
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onsemi NTF3055-100T3LF

Manufacturer No:
NTF3055-100T3LF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055-100T3LF is a power MOSFET transistor produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is packaged in a SOT-223 case and is suitable for a variety of applications including power supplies, converters, power motor controls, and bridge circuits. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate VoltageVDGR60Vdc
Gate-to-Source Voltage (Continuous)VGS±20Vdc
Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms)VGS±30Vdc
Maximum Drain CurrentID3.0A
Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.5 A)RDS(on)88 - 110
Maximum Lead Temperature for SolderingTL260°C

Key Features

  • N-Channel MOSFET with a maximum drain current of 3.0 A and a maximum drain-to-source voltage of 60 V.
  • Designed for low voltage, high speed switching applications.
  • NVF prefix indicates AEC-Q101 qualification and PPAP capability, suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.
  • Low on-resistance (RDS(on)) of 88 - 110 mΩ at VGS = 10 Vdc and ID = 1.5 A.
  • High forward transconductance (gfs) of 3.2 Mhos.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTF3055-100T3LF MOSFET? The maximum drain-to-source voltage is 60 Vdc.
  2. What is the maximum drain current of the NTF3055-100T3LF MOSFET? The maximum drain current is 3.0 A.
  3. Is the NTF3055-100T3LF MOSFET suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
  4. What is the package type of the NTF3055-100T3LF MOSFET? The package type is SOT-223.
  5. Is the NTF3055-100T3LF MOSFET Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  6. What are the typical applications of the NTF3055-100T3LF MOSFET? Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  7. What is the static drain-to-source on-resistance of the NTF3055-100T3LF MOSFET? The static drain-to-source on-resistance (RDS(on)) is 88 - 110 mΩ at VGS = 10 Vdc and ID = 1.5 A.
  8. What is the maximum lead temperature for soldering purposes? The maximum lead temperature for soldering purposes is 260°C.
  9. What is the gate threshold voltage of the NTF3055-100T3LF MOSFET? The gate threshold voltage (VGS(th)) is 2.0 - 3.0 Vdc.
  10. What is the forward transconductance of the NTF3055-100T3LF MOSFET? The forward transconductance (gfs) is 3.2 Mhos.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055-100T1G
NTF3055-100T1G
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3LF
NTF3055-100T3LF
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3G
NTF3055-100T3G
MOSFET N-CH 60V 3A SOT223
NVF3055-100T1G
NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055-100T3LF NTF3055-160T3LF
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.5A, 10V 160mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V 280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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