NVF3055-100T1G
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onsemi NVF3055-100T1G

Manufacturer No:
NVF3055-100T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The NVF3055-100T1G is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is packaged in a SOT-223 (TO-261) case and is Pb-Free and RoHS compliant. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage (RGS = 10 MΩ) VDGR 60 Vdc
Gate-to-Source Voltage VGS ±20 (Continuous), ±30 (Non-repetitive, tp ≤ 10 ms) Vdc, Vpk
Drain Current ID 3.0 A (Continuous @ TA = 25°C), 1.4 A (Continuous @ TA = 100°C), 9.0 A (Single Pulse, tp ≤ 10 μs) Adc, Apk
Total Power Dissipation @ TA = 25°C PD 2.1 W (Note 1), 1.3 W (Note 2) W
Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C
Single Pulse Drain-to-Source Avalanche Energy EAS 74 mJ mJ
Thermal Resistance - Junction-to-Ambient RθJA 72.3 °C/W (Note 1), 114 °C/W (Note 2) °C/W
Maximum Lead Temperature for Soldering TL 260 °C
Static Drain-to-Source On-Resistance RDS(on) 88 - 110 mΩ (VGS = 10 Vdc, ID = 1.5 A)

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS compliant.
  • High speed switching capabilities.
  • Low on-resistance (RDS(on) = 88 - 110 mΩ at VGS = 10 Vdc, ID = 1.5 A).
  • High drain current (3.0 A continuous at TA = 25°C).
  • Wide operating temperature range (-55°C to 175°C).

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NVF3055-100T1G MOSFET? The maximum drain-to-source voltage is 60 Vdc.
  2. What is the continuous drain current rating at 25°C? The continuous drain current rating at 25°C is 3.0 A.
  3. Is the NVF3055-100T1G Pb-Free and RoHS compliant? Yes, the NVF3055-100T1G is Pb-Free and RoHS compliant.
  4. What are the typical applications for this MOSFET? Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  5. What is the thermal resistance (junction-to-ambient) for this device? The thermal resistance (junction-to-ambient) is 72.3 °C/W (Note 1) and 114 °C/W (Note 2).
  6. What is the maximum lead temperature for soldering? The maximum lead temperature for soldering is 260°C.
  7. What is the static drain-to-source on-resistance? The static drain-to-source on-resistance is 88 - 110 mΩ at VGS = 10 Vdc, ID = 1.5 A.
  8. Is the NVF3055-100T1G AEC-Q101 qualified? Yes, the NVF3055-100T1G is AEC-Q101 qualified and PPAP capable.
  9. What is the operating temperature range of the NVF3055-100T1G? The operating temperature range is -55°C to 175°C.
  10. What package type is used for the NVF3055-100T1G? The NVF3055-100T1G is packaged in a SOT-223 (TO-261) case.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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In Stock

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