Overview
The NTF3055-100T3G is a power MOSFET from onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is housed in a SOT-223 package and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
Rating | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 60 | Vdc |
Drain-to-Gate Voltage (RGS = 10 MΩ) | VDGR | 60 | Vdc |
Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) | VGS | ±30 | Vpk |
Drain Current - Continuous @ TA = 25°C | ID | 3.0 | Adc |
Drain Current - Continuous @ TA = 100°C | ID | 1.4 | Adc |
Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | 9.0 | Apk |
Total Power Dissipation @ TA = 25°C (Note 1) | PD | 2.1 | W |
Total Power Dissipation @ TA = 25°C (Note 2) | PD | 1.3 | W |
Derate above 25°C | - | 0.014 | W/°C |
Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C |
Single Pulse Drain-to-Source Avalanche Energy | EAS | 74 | mJ |
Thermal Resistance - Junction-to-Ambient (Note 1) | RθJA | 72.3 | °C/W |
Thermal Resistance - Junction-to-Ambient (Note 2) | RθJA | 114 | °C/W |
Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- N-Channel MOSFET with a maximum drain current of 3.0 A and a maximum drain-to-source voltage of 60 V.
- Low on-resistance (RDS(on)) of 110 mΩ at VGS = 10 V and ID = 1.5 A.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free and RoHS compliant, ensuring environmental sustainability.
- High speed switching capabilities, making it ideal for power supplies, converters, power motor controls, and bridge circuits.
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Q & A
- What is the maximum drain current of the NTF3055-100T3G MOSFET?
The maximum drain current is 3.0 A at TA = 25°C. - What is the maximum drain-to-source voltage rating of this MOSFET?
The maximum drain-to-source voltage rating is 60 V. - Is the NTF3055-100T3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What is the on-resistance (RDS(on)) of this MOSFET?
The on-resistance (RDS(on)) is 110 mΩ at VGS = 10 V and ID = 1.5 A. - What are the typical applications of the NTF3055-100T3G?
Typical applications include power supplies, converters, power motor controls, and bridge circuits. - Is the NTF3055-100T3G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant. - What is the maximum operating temperature range for this MOSFET?
The operating and storage temperature range is -55°C to 175°C. - What is the thermal resistance (RθJA) of the NTF3055-100T3G when surface mounted to an FR4 board?
The thermal resistance (RθJA) is 72.3°C/W when surface mounted to an FR4 board using a 1″ pad size, and 114°C/W when using the minimum recommended pad size. - What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C. - What is the single pulse drain-to-source avalanche energy rating of this MOSFET?
The single pulse drain-to-source avalanche energy rating is 74 mJ.