NTF3055-100T3G
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onsemi NTF3055-100T3G

Manufacturer No:
NTF3055-100T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NTF3055-100T3G is a power MOSFET from onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is housed in a SOT-223 package and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate Voltage (RGS = 10 MΩ)VDGR60Vdc
Gate-to-Source Voltage - ContinuousVGS±20Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms)VGS±30Vpk
Drain Current - Continuous @ TA = 25°CID3.0Adc
Drain Current - Continuous @ TA = 100°CID1.4Adc
Drain Current - Single Pulse (tp ≤ 10 μs)IDM9.0Apk
Total Power Dissipation @ TA = 25°C (Note 1)PD2.1W
Total Power Dissipation @ TA = 25°C (Note 2)PD1.3W
Derate above 25°C-0.014W/°C
Operating and Storage Temperature RangeTJ, Tstg-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS74mJ
Thermal Resistance - Junction-to-Ambient (Note 1)RθJA72.3°C/W
Thermal Resistance - Junction-to-Ambient (Note 2)RθJA114°C/W
Maximum Lead Temperature for Soldering PurposesTL260°C

Key Features

  • N-Channel MOSFET with a maximum drain current of 3.0 A and a maximum drain-to-source voltage of 60 V.
  • Low on-resistance (RDS(on)) of 110 mΩ at VGS = 10 V and ID = 1.5 A.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • High speed switching capabilities, making it ideal for power supplies, converters, power motor controls, and bridge circuits.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain current of the NTF3055-100T3G MOSFET?
    The maximum drain current is 3.0 A at TA = 25°C.
  2. What is the maximum drain-to-source voltage rating of this MOSFET?
    The maximum drain-to-source voltage rating is 60 V.
  3. Is the NTF3055-100T3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  4. What is the on-resistance (RDS(on)) of this MOSFET?
    The on-resistance (RDS(on)) is 110 mΩ at VGS = 10 V and ID = 1.5 A.
  5. What are the typical applications of the NTF3055-100T3G?
    Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  6. Is the NTF3055-100T3G Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  7. What is the maximum operating temperature range for this MOSFET?
    The operating and storage temperature range is -55°C to 175°C.
  8. What is the thermal resistance (RθJA) of the NTF3055-100T3G when surface mounted to an FR4 board?
    The thermal resistance (RθJA) is 72.3°C/W when surface mounted to an FR4 board using a 1″ pad size, and 114°C/W when using the minimum recommended pad size.
  9. What is the maximum lead temperature for soldering purposes?
    The maximum lead temperature for soldering purposes is 260°C.
  10. What is the single pulse drain-to-source avalanche energy rating of this MOSFET?
    The single pulse drain-to-source avalanche energy rating is 74 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055-100T1G
NTF3055-100T1G
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3LF
NTF3055-100T3LF
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3G
NTF3055-100T3G
MOSFET N-CH 60V 3A SOT223
NVF3055-100T1G
NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055-100T3G NTF3055-100T1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.5A, 10V 110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V 455 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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