NTF3055-100T3G
  • Share:

onsemi NTF3055-100T3G

Manufacturer No:
NTF3055-100T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055-100T3G is a power MOSFET from onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is housed in a SOT-223 package and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate Voltage (RGS = 10 MΩ)VDGR60Vdc
Gate-to-Source Voltage - ContinuousVGS±20Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms)VGS±30Vpk
Drain Current - Continuous @ TA = 25°CID3.0Adc
Drain Current - Continuous @ TA = 100°CID1.4Adc
Drain Current - Single Pulse (tp ≤ 10 μs)IDM9.0Apk
Total Power Dissipation @ TA = 25°C (Note 1)PD2.1W
Total Power Dissipation @ TA = 25°C (Note 2)PD1.3W
Derate above 25°C-0.014W/°C
Operating and Storage Temperature RangeTJ, Tstg-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS74mJ
Thermal Resistance - Junction-to-Ambient (Note 1)RθJA72.3°C/W
Thermal Resistance - Junction-to-Ambient (Note 2)RθJA114°C/W
Maximum Lead Temperature for Soldering PurposesTL260°C

Key Features

  • N-Channel MOSFET with a maximum drain current of 3.0 A and a maximum drain-to-source voltage of 60 V.
  • Low on-resistance (RDS(on)) of 110 mΩ at VGS = 10 V and ID = 1.5 A.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • High speed switching capabilities, making it ideal for power supplies, converters, power motor controls, and bridge circuits.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain current of the NTF3055-100T3G MOSFET?
    The maximum drain current is 3.0 A at TA = 25°C.
  2. What is the maximum drain-to-source voltage rating of this MOSFET?
    The maximum drain-to-source voltage rating is 60 V.
  3. Is the NTF3055-100T3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  4. What is the on-resistance (RDS(on)) of this MOSFET?
    The on-resistance (RDS(on)) is 110 mΩ at VGS = 10 V and ID = 1.5 A.
  5. What are the typical applications of the NTF3055-100T3G?
    Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  6. Is the NTF3055-100T3G Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  7. What is the maximum operating temperature range for this MOSFET?
    The operating and storage temperature range is -55°C to 175°C.
  8. What is the thermal resistance (RθJA) of the NTF3055-100T3G when surface mounted to an FR4 board?
    The thermal resistance (RθJA) is 72.3°C/W when surface mounted to an FR4 board using a 1″ pad size, and 114°C/W when using the minimum recommended pad size.
  9. What is the maximum lead temperature for soldering purposes?
    The maximum lead temperature for soldering purposes is 260°C.
  10. What is the single pulse drain-to-source avalanche energy rating of this MOSFET?
    The single pulse drain-to-source avalanche energy rating is 74 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
541

Please send RFQ , we will respond immediately.

Same Series
NTF3055-100T1
NTF3055-100T1
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3LF
NTF3055-100T3LF
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3G
NTF3055-100T3G
MOSFET N-CH 60V 3A SOT223
NVF3055-100T1G
NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055-100T3G NTF3055-100T1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.5A, 10V 110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V 455 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP