NTF3055-100T1G
  • Share:

onsemi NTF3055-100T1G

Manufacturer No:
NTF3055-100T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055-100T1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high-speed switching applications and is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a drain-to-source voltage (Vdss) of 60V, a drain current (ID) of 3.0A, and a low on-resistance (RDS(on)) of 110mΩ. It is packaged in a SOT-223 (TO-261-4, SC-73) surface mount package, making it ideal for compact and efficient designs.

Key Specifications

FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDS(on)) 110 mΩ
Rated Power Dissipation 2.1 W
Gate Charge (Qg) 22 nC
Package Style SOT-223 (TO-261-4, SC-73)
Mounting Method Surface Mount
Continuous Drain Current (ID) at TA = 25°C 3.0 A
Operating and Storage Temperature Range -55°C to 175°C
Maximum Lead Temperature for Soldering 260°C

Key Features

  • Low On-Resistance: The NTF3055-100T1G features a low RDS(on) of 110 mΩ, which enhances efficiency in high-speed switching applications.
  • High Current Capability: With a continuous drain current of 3.0 A, this MOSFET is suitable for demanding applications.
  • Compact Packaging: The SOT-223 package is designed for surface mount applications, offering a compact solution for modern designs.
  • RoHS Compliant and Pb-Free: The device is lead-free and complies with RoHS standards, making it environmentally friendly.
  • AEC-Q101 Qualified: For automotive and other applications requiring unique site and control change requirements, the NVF prefix version is AEC-Q101 qualified and PPAP capable.

Applications

  • Power Supplies: Ideal for use in power supply units due to its high efficiency and low on-resistance.
  • Converters: Suitable for DC-DC converters and other power conversion applications.
  • Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
  • Bridge Circuits: Applicable in bridge configurations for various power management systems.

Q & A

  1. What is the drain-to-source voltage rating of the NTF3055-100T1G?

    The drain-to-source voltage (Vdss) rating is 60 V.

  2. What is the maximum continuous drain current of the NTF3055-100T1G at 25°C?

    The maximum continuous drain current (ID) at 25°C is 3.0 A.

  3. What is the package type and mounting method of the NTF3055-100T1G?

    The package type is SOT-223 (TO-261-4, SC-73), and the mounting method is surface mount.

  4. Is the NTF3055-100T1G RoHS compliant and Pb-free?

    Yes, the device is RoHS compliant and Pb-free.

  5. What are some typical applications of the NTF3055-100T1G?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits).

  6. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C).

  7. What is the gate charge (Qg) of the NTF3055-100T1G?

    The gate charge (Qg) is 22 nC).

  8. Is the NTF3055-100T1G suitable for automotive applications?

    Yes, the NVF prefix version is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications).

  9. What is the operating and storage temperature range of the NTF3055-100T1G?

    The operating and storage temperature range is -55°C to 175°C).

  10. What is the typical on-resistance (RDS(on)) of the NTF3055-100T1G?

    The typical on-resistance (RDS(on)) is 110 mΩ).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.95
932

Please send RFQ , we will respond immediately.

Same Series
NTF3055-100T1G
NTF3055-100T1G
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3LF
NTF3055-100T3LF
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3G
NTF3055-100T3G
MOSFET N-CH 60V 3A SOT223
NVF3055-100T1G
NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055-100T1G NTF3055-100T3G NTF3055-100T1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.5A, 10V 110mOhm @ 1.5A, 10V 110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V 455 pF @ 25 V 455 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD