NTF3055-100T1G
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onsemi NTF3055-100T1G

Manufacturer No:
NTF3055-100T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055-100T1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high-speed switching applications and is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a drain-to-source voltage (Vdss) of 60V, a drain current (ID) of 3.0A, and a low on-resistance (RDS(on)) of 110mΩ. It is packaged in a SOT-223 (TO-261-4, SC-73) surface mount package, making it ideal for compact and efficient designs.

Key Specifications

FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDS(on)) 110 mΩ
Rated Power Dissipation 2.1 W
Gate Charge (Qg) 22 nC
Package Style SOT-223 (TO-261-4, SC-73)
Mounting Method Surface Mount
Continuous Drain Current (ID) at TA = 25°C 3.0 A
Operating and Storage Temperature Range -55°C to 175°C
Maximum Lead Temperature for Soldering 260°C

Key Features

  • Low On-Resistance: The NTF3055-100T1G features a low RDS(on) of 110 mΩ, which enhances efficiency in high-speed switching applications.
  • High Current Capability: With a continuous drain current of 3.0 A, this MOSFET is suitable for demanding applications.
  • Compact Packaging: The SOT-223 package is designed for surface mount applications, offering a compact solution for modern designs.
  • RoHS Compliant and Pb-Free: The device is lead-free and complies with RoHS standards, making it environmentally friendly.
  • AEC-Q101 Qualified: For automotive and other applications requiring unique site and control change requirements, the NVF prefix version is AEC-Q101 qualified and PPAP capable.

Applications

  • Power Supplies: Ideal for use in power supply units due to its high efficiency and low on-resistance.
  • Converters: Suitable for DC-DC converters and other power conversion applications.
  • Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
  • Bridge Circuits: Applicable in bridge configurations for various power management systems.

Q & A

  1. What is the drain-to-source voltage rating of the NTF3055-100T1G?

    The drain-to-source voltage (Vdss) rating is 60 V.

  2. What is the maximum continuous drain current of the NTF3055-100T1G at 25°C?

    The maximum continuous drain current (ID) at 25°C is 3.0 A.

  3. What is the package type and mounting method of the NTF3055-100T1G?

    The package type is SOT-223 (TO-261-4, SC-73), and the mounting method is surface mount.

  4. Is the NTF3055-100T1G RoHS compliant and Pb-free?

    Yes, the device is RoHS compliant and Pb-free.

  5. What are some typical applications of the NTF3055-100T1G?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits).

  6. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C).

  7. What is the gate charge (Qg) of the NTF3055-100T1G?

    The gate charge (Qg) is 22 nC).

  8. Is the NTF3055-100T1G suitable for automotive applications?

    Yes, the NVF prefix version is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications).

  9. What is the operating and storage temperature range of the NTF3055-100T1G?

    The operating and storage temperature range is -55°C to 175°C).

  10. What is the typical on-resistance (RDS(on)) of the NTF3055-100T1G?

    The typical on-resistance (RDS(on)) is 110 mΩ).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055-100T1
NTF3055-100T1
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3LF
NTF3055-100T3LF
MOSFET N-CH 60V 3A SOT223
NTF3055-100T3G
NTF3055-100T3G
MOSFET N-CH 60V 3A SOT223
NVF3055-100T1G
NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

Similar Products

Part Number NTF3055-100T1G NTF3055-100T3G NTF3055-100T1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.5A, 10V 110mOhm @ 1.5A, 10V 110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V 455 pF @ 25 V 455 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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