NTF3055-160T3LF
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onsemi NTF3055-160T3LF

Manufacturer No:
NTF3055-160T3LF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055-160T3LF is a high-performance N-Channel Power MOSFET designed and manufactured by onsemi. This device is part of the PowerTrench® family, known for its low voltage and high-speed switching capabilities. The NTF3055-160T3LF is housed in a SOT-223 package, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage (RGS = 10 MΩ) VDGR 60 Vdc
Gate-to-Source Voltage VGS ±20 Vdc
Maximum Lead Temperature for Soldering TL 260 °C
Continuous Drain Current ID 3.0 A
Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.5 A) RDS(on) 110
Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 - 4.0 Vdc

Key Features

  • Pb-Free and RoHS Compliant, ensuring environmental sustainability.
  • AEC-Q101 Qualified for automotive and other applications requiring unique site and control change requirements.
  • Low voltage and high-speed switching capabilities, making it ideal for power supplies, converters, power motor controls, and bridge circuits.
  • High efficiency due to low on-resistance (RDS(on) = 110 mΩ).
  • Compact SOT-223 package for space-efficient designs.

Applications

  • Power Supplies: Efficient switching in power supply units.
  • Converters: High-speed switching in DC-DC converters and other power conversion applications.
  • Power Motor Controls: Used in motor control circuits for efficient power management.
  • Bridge Circuits: Suitable for half-bridge and full-bridge configurations in various power systems.

Q & A

  1. What is the maximum drain-to-source voltage of the NTF3055-160T3LF?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the typical on-resistance of the NTF3055-160T3LF?

    The typical static drain-to-source on-resistance (RDS(on)) is 110 mΩ at VGS = 10 Vdc and ID = 1.5 A.

  3. Is the NTF3055-160T3LF RoHS compliant?

    Yes, the NTF3055-160T3LF is Pb-Free and RoHS compliant.

  4. What are the typical applications of the NTF3055-160T3LF?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits.

  5. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering purposes is 260°C.

  6. Is the NTF3055-160T3LF AEC-Q101 qualified?

    Yes, the NTF3055-160T3LF is AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements.

  7. What is the gate threshold voltage range of the NTF3055-160T3LF?

    The gate threshold voltage (VGS(th)) range is 2.0 to 4.0 Vdc.

  8. What package type is used for the NTF3055-160T3LF?

    The NTF3055-160T3LF is housed in a SOT-223 package.

  9. What is the continuous drain current rating of the NTF3055-160T3LF?

    The continuous drain current (ID) rating is 3.0 A.

  10. How can I obtain the datasheet for the NTF3055-160T3LF?

    You can download the datasheet from the onsemi website or through other authorized distributors like IC-Find.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055-160T3LF
NTF3055-160T3LF
MOSFET N-CH 60V 2A SOT223

Similar Products

Part Number NTF3055-160T3LF NTF3055-100T3LF
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1A, 10V 110mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V 455 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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