Overview
The MCH6341-TL-W is a Power MOSFET manufactured by ON Semiconductor. This device is designed for general-purpose switching applications and features a single P-Channel configuration. It is characterized by its low ON-resistance, 4V drive capability, and ESD diode-protected gate. The MCH6341-TL-W is suitable for a wide range of applications due to its robust specifications and compliance with RoHS and halogen-free standards.
Key Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer | ON Semiconductor | Technology | MOSFET (Metal Oxide) |
Mounting Style | SMD/SMT | Number of Channels | 1 Channel |
Transistor Polarity | P-Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 45 mΩ (typ), 59 mΩ (max) @ Vgs = 10V, Id = 3A |
Vgs th - Gate-Source Threshold Voltage | 2.6 V (max) @ Id = 1mA | Vgs - Gate-Source Voltage | ±20 V |
Qg - Gate Charge | 10 nC | Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | 150°C | Power Dissipation | 1.5 W |
Configuration | Single | Channel Mode | Enhancement |
Packaging | Reel | Series | MCH6341-TL-W |
Forward Transconductance - Min | 2.8 S @ Vds = 10V, Id = 3A | Rise Time | 26 ns |
Fall Time | 35 ns | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 7.5 ns | Unit Weight | 0.000265 oz |
Key Features
- Low ON-resistance: The MCH6341-TL-W features a low Rds(on) of 45 mΩ (typ) and 59 mΩ (max) at Vgs = 10V and Id = 3A, making it efficient for switching applications.
- 4V drive capability: This MOSFET can be driven with a low gate voltage, making it compatible with a variety of control circuits.
- ESD diode-protected gate: The gate is protected by an ESD diode, enhancing the device's robustness against electrostatic discharge.
- RoHS and halogen-free compliance: The device is free from lead and halogens, making it environmentally friendly and compliant with current regulations.
Applications
The MCH6341-TL-W is suitable for various general-purpose switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Audio and video equipment
- Industrial control systems
- Automotive electronics
Q & A
- What is the maximum drain-to-source breakdown voltage of the MCH6341-TL-W?
The maximum drain-to-source breakdown voltage (Vdss) is 30 V.
- What is the continuous drain current rating of the MCH6341-TL-W?
The continuous drain current (Id) is rated at 5 A.
- What is the typical ON-resistance of the MCH6341-TL-W?
The typical ON-resistance (Rds(on)) is 45 mΩ at Vgs = 10V and Id = 3A.
- What is the gate-source threshold voltage of the MCH6341-TL-W?
The gate-source threshold voltage (Vgs(th)) is between 1.2 V and 2.6 V at Id = 1mA.
- Is the MCH6341-TL-W RoHS compliant?
Yes, the MCH6341-TL-W is RoHS compliant and also halogen-free.
- What is the maximum operating temperature of the MCH6341-TL-W?
The maximum operating temperature is 150°C.
- What is the gate charge of the MCH6341-TL-W?
The gate charge (Qg) is 10 nC.
- What is the typical turn-on delay time of the MCH6341-TL-W?
The typical turn-on delay time is 7.5 ns).
- What is the typical fall time of the MCH6341-TL-W?
The typical fall time is 35 ns).
- What is the packaging type of the MCH6341-TL-W?
The device is packaged in a 6-MCPH (6-SMD, Flat Leads) and shipped in reels of 3000 pieces).