MCH6351-TL-W
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onsemi MCH6351-TL-W

Manufacturer No:
MCH6351-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 9A 6MCPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MCH6351-TL-W is a P-Channel Power MOSFET produced by ON Semiconductor. This device is part of the 1.8V drive series, designed for high-performance applications requiring low on-resistance and high current handling. The MCH6351-TL-W is known for its robust characteristics, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterSymbolConditionsValueUnit
Drain-to-Source VoltageVDSS--12V
On-Resistance (Max)RDS(ON)VGS = -4.5 V, ID = -4.5 A16.9 mΩ
Maximum Continuous Drain CurrentIDVGS = -4.5 V-9 AA
Operating Temperature RangeTJ--55 to 150°C
Package Type--TO-220-
Pins--6-

Key Features

  • Low On-Resistance: The MCH6351-TL-W features a low RDS(ON) of 16.9 mΩ at VGS = -4.5 V, enhancing efficiency in power management applications.
  • High Current Handling: Capable of handling a maximum continuous drain current of -9 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: Operates reliably from -55°C to 150°C, ensuring stability in various environmental conditions.
  • 1.8V Drive Capability: Can be driven with a low gate voltage, reducing the complexity and power consumption of the driving circuit.

Applications

  • Power Management: Ideal for DC-DC converters, power supplies, and other power management circuits.
  • Switching Applications: Suitable for high-frequency switching applications such as motor control, audio amplifiers, and power amplifiers.
  • Automotive Systems: Can be used in automotive systems requiring high reliability and robust performance.
  • Industrial Control Systems: Applicable in industrial control systems, including motor drives and power distribution units.

Q & A

  1. What is the maximum drain-to-source voltage of the MCH6351-TL-W?
    The maximum drain-to-source voltage (VDSS) is -12 V.
  2. What is the on-resistance of the MCH6351-TL-W at VGS = -4.5 V?
    The on-resistance (RDS(ON)) is 16.9 mΩ at VGS = -4.5 V.
  3. What is the maximum continuous drain current of the MCH6351-TL-W?
    The maximum continuous drain current (ID) is -9 A.
  4. What is the operating temperature range of the MCH6351-TL-W?
    The operating temperature range is from -55°C to 150°C.
  5. What package type does the MCH6351-TL-W come in?
    The MCH6351-TL-W comes in a TO-220 package.
  6. How many pins does the MCH6351-TL-W have?
    The MCH6351-TL-W has 6 pins.
  7. Is the MCH6351-TL-W suitable for high-frequency switching applications?
    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high current handling capability.
  8. Can the MCH6351-TL-W be used in automotive systems?
    Yes, it can be used in automotive systems due to its high reliability and robust performance.
  9. What is the gate voltage required to drive the MCH6351-TL-W?
    The MCH6351-TL-W can be driven with a gate voltage as low as -1.8 V.
  10. Is the MCH6351-TL-W MSL 1 qualified?
    Yes, the MCH6351-TL-W is MSL 1 qualified, indicating it has unlimited shelf life.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:16.9mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MCPH
Package / Case:6-SMD, Flat Leads
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Similar Products

Part Number MCH6351-TL-W MCH6353-TL-W MCH6321-TL-W MCH6331-TL-W MCH6341-TL-W
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 6A (Ta) 4A (Ta) 3.5A (Ta) 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 16.9mOhm @ 4.5A, 4.5V 35mOhm @ 3A, 4.5V 83mOhm @ 2A, 4.5V 98mOhm @ 1.5A, 10V 59mOhm @ 3A, 10V
Vgs(th) (Max) @ Id - - - 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 4.5 V 12 nC @ 4.5 V 4.6 nC @ 4.5 V 5 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±10V ±10V ±10V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 6 V 1250 pF @ 6 V 375 pF @ 10 V 250 pF @ 10 V 430 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 1.5W (Ta) 1.4W (Ta) 1.5W (Ta) 1.5W (Ta) -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-MCPH 6-MCPH 6-MCPH SC-88FL/MCPH6 6-MCPH
Package / Case 6-SMD, Flat Leads 6-SMD, Flat Leads 6-SMD, Flat Leads 6-TSSOP, SC-88, SOT-363 6-SMD, Flat Leads

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