ATP304-TL-H
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onsemi ATP304-TL-H

Manufacturer No:
ATP304-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 100A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ATP304-TL-H is a high-performance P-Channel Power MOSFET produced by onsemi. This device is designed to offer superior electrical characteristics, making it suitable for a wide range of power management applications. With its robust specifications and features, the ATP304-TL-H is an excellent choice for systems requiring high current handling and low on-state resistance.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID -100 A
Drain Current (Pulse) IDP -400 A
On-State Resistance RDS(on) 5.0 - 6.5
Input Capacitance Ciss 13000 pF
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Allowable Power Dissipation PD 90 W
Package Type DPAK (Single Gauge) / ATPAK

Key Features

  • High Current Capability: The ATP304-TL-H can handle up to -100 A of continuous drain current and -400 A of pulse current, making it suitable for high-power applications.
  • Low On-State Resistance: With a typical on-state resistance of 5.0 mΩ and a maximum of 6.5 mΩ, this MOSFET minimizes power losses during operation.
  • High Voltage Rating: The device is rated for a drain-to-source voltage of -60 V, ensuring robust performance in high-voltage systems.
  • Low Input Capacitance: The input capacitance (Ciss) is 13000 pF, which helps in reducing the gate drive requirements.
  • Environmental Compliance: The ATP304-TL-H is Pb-free, halogen-free, and RoHS compliant, making it suitable for use in environmentally friendly designs.
  • Fast Switching Times: The device features fast switching times, including a turn-on delay time of 80 ns and a turn-off delay time of 780 ns, which are crucial for high-frequency applications.

Applications

  • Power Supplies: The ATP304-TL-H is ideal for use in high-power DC-DC converters and power supplies due to its high current handling and low on-state resistance.
  • Motor Control: This MOSFET is suitable for motor control applications, including brushless DC motors and stepper motors, where high current and efficient switching are required.
  • Industrial Automation: It can be used in various industrial automation applications such as power management in control systems and drives.
  • Renewable Energy Systems: The ATP304-TL-H can be applied in renewable energy systems, such as solar and wind power inverters, due to its high efficiency and reliability.

Q & A

  1. What is the maximum drain-to-source voltage of the ATP304-TL-H?

    The maximum drain-to-source voltage (VDSS) is -60 V.

  2. What is the typical on-state resistance of the ATP304-TL-H?

    The typical on-state resistance (RDS(on)) is 5.0 mΩ.

  3. What is the maximum continuous drain current of the ATP304-TL-H?

    The maximum continuous drain current (ID) is -100 A.

  4. What is the package type of the ATP304-TL-H?

    The package type is DPAK (Single Gauge) / ATPAK.

  5. Is the ATP304-TL-H environmentally compliant?

    Yes, the ATP304-TL-H is Pb-free, halogen-free, and RoHS compliant.

  6. What are the typical switching times of the ATP304-TL-H?

    The turn-on delay time is 80 ns, and the turn-off delay time is 780 ns.

  7. What is the input capacitance of the ATP304-TL-H?

    The input capacitance (Ciss) is 13000 pF.

  8. What is the allowable power dissipation of the ATP304-TL-H?

    The allowable power dissipation (PD) is 90 W at Tc = 25°C.

  9. What are some common applications of the ATP304-TL-H?

    Common applications include power supplies, motor control, industrial automation, and renewable energy systems.

  10. What is the storage temperature range of the ATP304-TL-H?

    The storage temperature range (Tstg) is -55 to +150°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13000 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:ATPAK (2 leads+tab)
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Similar Products

Part Number ATP304-TL-H ATP404-TL-H ATP104-TL-H ATP204-TL-H ATP301-TL-H ATP302-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V 30 V 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 95A (Ta) 75A (Ta) 100A (Ta) 28A (Ta) 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 50A, 10V 7.2mOhm @ 48A, 10V 8.4mOhm @ 38A, 10V 5.6mOhm @ 50A, 10V 75mOhm @ 14A, 10V 13mOhm @ 35A, 10V
Vgs(th) (Max) @ Id - - - - - -
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 120 nC @ 10 V 76 nC @ 10 V 70 nC @ 10 V 73 nC @ 10 V 115 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 20 V 6400 pF @ 20 V 3950 pF @ 10 V 4600 pF @ 10 V 4000 pF @ 20 V 5400 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 90W (Tc) 70W (Tc) 60W (Tc) 60W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab)

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