ATP301-TL-H
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onsemi ATP301-TL-H

Manufacturer No:
ATP301-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 28A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ATP301-TL-H is a P-Channel Power MOSFET produced by onsemi, designed for high-performance applications requiring low ON-resistance and high current handling. This device is packaged in the ATPAK package, which is slim and efficient, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS - -100 V
Gate-to-Source Voltage VGSS ± ±20 V
Drain Current (DC) ID - -28 A
Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% - A
Allowable Power Dissipation PD Tc=25°C 50 W
Channel Temperature Tch - 150 °C
Storage Temperature Tstg - -55 to +150 °C
Static Drain-to-Source On-State Resistance RDS(on) ID=-28A, VGS=-10V 57 (typ.)
Input Capacitance Ciss VDS=-10V, f=1MHz 4000 (typ.) pF

Key Features

  • Low ON-resistance: The ATP301-TL-H features a low ON-resistance of 57 mΩ (typical), which minimizes power losses during operation.
  • High Current Capability: This MOSFET can handle a high drain current of up to 28 A, making it suitable for high-power applications.
  • Slim Package: The ATPAK package is designed to be compact and efficient, allowing for better thermal management and space-saving designs.
  • 10V Drive: The device can be driven with a gate-to-source voltage of 10V, which is convenient for many control circuits.
  • Halogen Free Compliance: The ATP301-TL-H is halogen-free, making it environmentally friendly and compliant with RoHS standards.
  • Protection Diode: The device includes a built-in protection diode, enhancing its robustness against reverse voltage conditions.

Applications

  • Power Management: Suitable for power supply circuits, DC-DC converters, and other power management systems.
  • Motor Control: Can be used in motor drive circuits due to its high current handling and low ON-resistance.
  • Switching Applications: Ideal for switching applications such as relay drivers, solenoid drivers, and other high-current switching needs.
  • Automotive Systems: Applicable in automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-to-source voltage of the ATP301-TL-H?

    The maximum drain-to-source voltage is -100V.

  2. What is the typical ON-resistance of the ATP301-TL-H?

    The typical ON-resistance is 57 mΩ.

  3. What is the maximum drain current for the ATP301-TL-H?

    The maximum drain current is -28 A.

  4. What is the package type of the ATP301-TL-H?

    The package type is ATPAK.

  5. Is the ATP301-TL-H halogen-free?

    Yes, the ATP301-TL-H is halogen-free and RoHS compliant.

  6. What is the input capacitance of the ATP301-TL-H?

    The input capacitance is 4000 pF (typical) at VDS=-10V and f=1MHz.

  7. What are the storage temperature limits for the ATP301-TL-H?

    The storage temperature limits are -55°C to +150°C.

  8. Does the ATP301-TL-H have a built-in protection diode?

    Yes, the device includes a built-in protection diode.

  9. What is the maximum allowable power dissipation for the ATP301-TL-H?

    The maximum allowable power dissipation is 50 W at Tc=25°C.

  10. What are some common applications for the ATP301-TL-H?

    Common applications include power management, motor control, switching applications, and automotive systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:ATPAK (2 leads+tab)
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Similar Products

Part Number ATP301-TL-H ATP304-TL-H ATP302-TL-H ATP401-TL-H ATP101-TL-H ATP201-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V 60 V 60 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta) 100A (Ta) 70A (Ta) 100A (Ta) 25A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 14A, 10V 6.5mOhm @ 50A, 10V 13mOhm @ 35A, 10V 3.7mOhm @ 50A, 10V 30mOhm @ 13A, 10V 17mOhm @ 18A, 10V
Vgs(th) (Max) @ Id - - - - - -
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 250 nC @ 10 V 115 nC @ 10 V 300 nC @ 10 V 18.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 20 V 13000 pF @ 20 V 5400 pF @ 20 V 17000 pF @ 20 V 875 pF @ 10 V 985 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 90W (Tc) 70W (Tc) 90W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab)

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