Transistors - FETs, MOSFETs - Single

Category Introduction

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Product List

39097 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
	STW62N65M5 MOSFET N-CH 650V 46A TO247 STMicroelectronics	10	$15.09		Automotive, AEC-Q101, MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	49mOhm @ 23A, 10V	5V @ 250µA	142 nC @ 10 V	±25V	6420 pF @ 100 V	-	330W (Tc)	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
	STW48NM60N MOSFET N-CH 600V 44A TO247 STMicroelectronics	41	$16.33		MDmesh™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	44A (Tc)	10V	70mOhm @ 20A, 10V	4V @ 250µA	124 nC @ 10 V	±25V	4285 pF @ 50 V	-	330W (Tc)	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
	SCT30N120D2 SICFET N-CH 1200V 40A HIP247 STMicroelectronics	5	$20.17			Tray	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	20V	100mOhm @ 20A, 20V	3.5V @ 1mA	105 nC @ 20 V	+25V, -10V	1700 pF @ 400 V	-	270W (Tc)	-55°C ~ 200°C (TJ)	Through Hole	HiP247™	TO-247-3
	STY60NM60 MOSFET N-CH 600V 60A MAX247 STMicroelectronics	3	$22.84		MDmesh™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	60A (Tc)	10V	55mOhm @ 30A, 10V	5V @ 250µA	266 nC @ 10 V	±30V	7300 pF @ 25 V	-	560W (Tc)	150°C (TJ)	Through Hole	MAX247™	TO-247-3
	NVHL025N65S3 MOSFET N-CH 650V 75A TO247-3 onsemi	27	$23.70		Automotive, AEC-Q101, SuperFET® III	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	25mOhm @ 37.5A, 10V	4.5V @ 3mA	236 nC @ 10 V	±30V	7330 pF @ 400 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
	C3M0040120K 1200V 40MOHM SIC MOSFET Wolfspeed, Inc.	33	$23.79		C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	66A (Tc)	15V	53.5mOhm @ 33.3A, 15V	3.6V @ 9.2mA	99 nC @ 15 V	+15V, -4V	2900 pF @ 1000 V	-	326W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
	STY112N65M5 MOSFET N-CH 650V 96A MAX247 STMicroelectronics	18	$38.77		MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	96A (Tc)	10V	22mOhm @ 47A, 10V	5V @ 250µA	350 nC @ 10 V	±25V	16870 pF @ 100 V	-	625W (Tc)	150°C (TJ)	Through Hole	MAX247™	TO-247-3
	BSS84AKW NOW NEXPERIA BSS84AKW - SMALL SI Nexperia USA Inc.	304	$0.00			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	2N7002CK 2N7002 - SMALL SIGNAL FIELD-EFFE Nexperia USA Inc.	558	$0.00			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	NX7002AK.215 NOW NEXPERIA NX7002AK - SMALL SI NXP USA Inc.	580	$0.00			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	NX7002AK2,215 NEXPERIA NX7002AK - SMALL SIGNAL NXP Semiconductors	41,879	$0.02			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	2N7002PS115 NOW NEXPERIA 2N7002PS - SMALL SI Nexperia USA Inc.	223	$0.00			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	PMZB290UNE,315 MOSFET N-CH 20V 1A DFN1006B-3 NXP USA Inc.	5,666	$0.04			Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1A (Ta)	1.8V, 4.5V	380mOhm @ 500mA, 4.5V	950mV @ 250µA	0.68 nC @ 4.5 V	±8V	83 pF @ 10 V	-	360mW (Ta), 2.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006B-3	SC-101, SOT-883
	2N7002BKM315 NOW NEXPERIA 2N7002BKM - SMALL S Nexperia USA Inc.	70	$0.00		Automotive, AEC-Q101, TrenchMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	450mA (Ta)	10V	1.6Ohm @ 500mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	50 pF @ 10 V	-	360mW (Ta)	150°C (TJ)	Surface Mount	SOT-883	SC-101, SOT-883
	FDV302P SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	379	$0.00			Bulk	Active	P-Channel	MOSFET (Metal Oxide)	25 V	120mA (Ta)	2.7V, 4.5V	10Ohm @ 200mA, 4.5V	1.5V @ 250µA	0.31 nC @ 4.5 V	-8V	11000 pF @ 10 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
	2N7002W-F2-0000HF N-CH MOSFET 60V 0.34A SOT-323 Yangzhou Yangjie Electronic Technology Co.,Ltd	493	$0.28			Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	340mA (Ta)	4.5V, 10V	2.5Ohm @ 300mA, 10V	2.5V @ 250µA	1.6 nC @ 10 V	±30V	27.5 pF @ 30 V	-	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
	BSS123-F2-0000HF N-CH MOSFET 100V 0.2A SOT-23-3L Yangzhou Yangjie Electronic Technology Co.,Ltd	1,743	$0.29			Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200mA (Ta)	4.5V, 10V	5Ohm @ 200mA, 10V	3V @ 250µA	2.5 nC @ 10 V	±20V	14 pF @ 50 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
	BSS84-F2-0000HF P-CH MOSFET 60V 0.17A SOT-23-3L Yangzhou Yangjie Electronic Technology Co.,Ltd	3,217	$0.28			Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	170mA (Ta)	4.5V, 10V	8Ohm @ 150mA, 10V	2V @ 250µA	1.77 nC @ 10 V	±20V	43 pF @ 30 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
	2N7002KW-F2-0000HF N-CH MOSFET 60V 0.34A SOT-323 Yangzhou Yangjie Electronic Technology Co.,Ltd	2,865	$0.29			Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	340mA (Ta)	4.5V, 10V	2.5Ohm @ 300mA, 10V	2.5V @ 250µA	2.4 nC @ 10 V	±20V	30 pF @ 30 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
	2N7002A-F2-0000HF N-CH MOSFET 60V 0.34A SOT-23-3L Yangzhou Yangjie Electronic Technology Co.,Ltd	2,307	$0.29			Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	340mA (Ta)	4.5V, 10V	2.5Ohm @ 300mA, 10V	2.5V @ 250µA	1.6 nC @ 10 V	±30V	27.5 pF @ 30 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3