STY112N65M5
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STMicroelectronics STY112N65M5

Manufacturer No:
STY112N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 96A MAX247
Delivery:
Payment:
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Product Introduction

Overview

The STY112N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-State Resistance) 0.019 Ω (typical)
ID (Drain Current) 96 A
Ptot (Total Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -55°C to 150°C
Package Varies (e.g., TO-247, PowerFLAT)

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.019 Ω, reducing power losses and improving efficiency.
  • High drain current capability of 96 A, enabling the handling of significant power loads.
  • MDmesh M5 technology for enhanced performance and reliability.
  • PowerMESH horizontal layout for improved thermal management and reduced thermal resistance.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • Aerospace and defense applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STY112N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-state resistance of the STY112N65M5?

    The typical on-state resistance (RDS(on)) is 0.019 Ω.

  3. What is the maximum drain current of the STY112N65M5?

    The maximum drain current (ID) is 96 A.

  4. What technology is used in the STY112N65M5?

    The STY112N65M5 uses MDmesh M5 technology combined with PowerMESH horizontal layout.

  5. What are the typical applications of the STY112N65M5?

    Typical applications include power supplies, motor control, industrial automation, renewable energy systems, and aerospace/defense.

  6. What is the junction temperature range of the STY112N65M5?

    The junction temperature range is -55°C to 150°C.

  7. What packages are available for the STY112N65M5?

    The device is available in various packages, including TO-247 and PowerFLAT.

  8. How does the MDmesh M5 technology benefit the STY112N65M5?

    The MDmesh M5 technology enhances performance and reliability by reducing on-state resistance and improving thermal management.

  9. Is the STY112N65M5 suitable for high-power applications?

    Yes, the STY112N65M5 is designed for high-power applications due to its high voltage and current ratings.

  10. What are the advantages of using the PowerMESH horizontal layout in the STY112N65M5?

    The PowerMESH layout improves thermal management and reduces thermal resistance, enhancing overall device performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:350 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:16870 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):625W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:MAX247™
Package / Case:TO-247-3
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$38.77
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