STY112N65M5
  • Share:

STMicroelectronics STY112N65M5

Manufacturer No:
STY112N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 96A MAX247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STY112N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-State Resistance) 0.019 Ω (typical)
ID (Drain Current) 96 A
Ptot (Total Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -55°C to 150°C
Package Varies (e.g., TO-247, PowerFLAT)

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.019 Ω, reducing power losses and improving efficiency.
  • High drain current capability of 96 A, enabling the handling of significant power loads.
  • MDmesh M5 technology for enhanced performance and reliability.
  • PowerMESH horizontal layout for improved thermal management and reduced thermal resistance.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • Aerospace and defense applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STY112N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-state resistance of the STY112N65M5?

    The typical on-state resistance (RDS(on)) is 0.019 Ω.

  3. What is the maximum drain current of the STY112N65M5?

    The maximum drain current (ID) is 96 A.

  4. What technology is used in the STY112N65M5?

    The STY112N65M5 uses MDmesh M5 technology combined with PowerMESH horizontal layout.

  5. What are the typical applications of the STY112N65M5?

    Typical applications include power supplies, motor control, industrial automation, renewable energy systems, and aerospace/defense.

  6. What is the junction temperature range of the STY112N65M5?

    The junction temperature range is -55°C to 150°C.

  7. What packages are available for the STY112N65M5?

    The device is available in various packages, including TO-247 and PowerFLAT.

  8. How does the MDmesh M5 technology benefit the STY112N65M5?

    The MDmesh M5 technology enhances performance and reliability by reducing on-state resistance and improving thermal management.

  9. Is the STY112N65M5 suitable for high-power applications?

    Yes, the STY112N65M5 is designed for high-power applications due to its high voltage and current ratings.

  10. What are the advantages of using the PowerMESH horizontal layout in the STY112N65M5?

    The PowerMESH layout improves thermal management and reduces thermal resistance, enhancing overall device performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:350 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:16870 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):625W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:MAX247™
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$38.77
18

Please send RFQ , we will respond immediately.

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP