NX7002AK2,215
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NXP Semiconductors NX7002AK2,215

Manufacturer No:
NX7002AK2,215
Manufacturer:
NXP Semiconductors
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Description:
NEXPERIA NX7002AK - SMALL SIGNAL
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Product Introduction

Overview

The NX7002AK,215 is an N-Channel MOSFET produced by Nexperia, a leading manufacturer of semiconductor solutions. This device is part of the NX7002AK series and is designed for a wide range of applications requiring efficient and reliable power management. The NX7002AK,215 features a compact SOT-23 package, making it ideal for space-constrained designs.

Key Specifications

Specification Value
Brand Nexperia
Channel Type N-Channel
Maximum Continuous Drain Current 300 mA
Maximum Drain Source Voltage 60 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 4.5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.1 V
Minimum Gate Threshold Voltage 1.1 V
Maximum Power Dissipation 1.33 W
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Forward Diode Voltage 1.2 V
Typical Gate Charge @ Vgs 0.33 nC @ 4.5 V

Key Features

  • Compact SOT-23 package for space-efficient designs.
  • Enhancement mode N-Channel MOSFET for precise control applications.
  • Maximum drain source voltage of 60 V and maximum continuous drain current of 300 mA.
  • Low on-resistance (Rds(on)) of 4.5 Ω for efficient power handling.
  • Wide operating temperature range from -55 °C to +150 °C.
  • Surface mount technology for easy integration into modern PCB designs.

Applications

The NX7002AK,215 is suitable for a variety of applications, including:

  • Power management in consumer electronics.
  • Automotive systems requiring reliable and efficient power control.
  • Industrial control systems and automation.
  • Audio and video equipment where low noise and high efficiency are crucial.
  • General-purpose switching and amplification in electronic circuits.

Q & A

  1. What is the maximum drain source voltage of the NX7002AK,215?

    The maximum drain source voltage is 60 V.

  2. What is the package type of the NX7002AK,215?

    The package type is SOT-23.

  3. What is the maximum continuous drain current of the NX7002AK,215?

    The maximum continuous drain current is 300 mA.

  4. What is the operating temperature range of the NX7002AK,215?

    The operating temperature range is from -55 °C to +150 °C.

  5. What is the typical gate charge at Vgs for the NX7002AK,215?

    The typical gate charge at Vgs is 0.33 nC @ 4.5 V.

  6. Is the NX7002AK,215 suitable for automotive applications?

    No, it is not specifically automotive qualified.

  7. What is the maximum power dissipation of the NX7002AK,215?

    The maximum power dissipation is 1.33 W.

  8. What is the channel mode of the NX7002AK,215?

    The channel mode is enhancement.

  9. What is the forward diode voltage of the NX7002AK,215?

    The forward diode voltage is 1.2 V.

  10. Can the NX7002AK,215 be used in high-frequency applications?

    Yes, it can be used in high-frequency applications due to its low on-resistance and efficient switching characteristics.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number NX7002AK2,215 NX7002AK,215
Manufacturer NXP Semiconductors Nexperia USA Inc.
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C - 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 5V, 10V
Rds On (Max) @ Id, Vgs - 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id - 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.43 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 17 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 265mW (Ta), 1.33W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - TO-236AB
Package / Case - TO-236-3, SC-59, SOT-23-3

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