NX7002AK,215
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Nexperia USA Inc. NX7002AK,215

Manufacturer No:
NX7002AK,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 190MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NX7002AK,215 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a Surface Mounted Device (SMD) plastic package, specifically the SOT-23-3 (TO-236AB) package. It is designed for high-performance applications, offering fast switching times and robust ESD protection up to 1.5 kV. The device is suitable for a variety of applications requiring efficient and reliable power management.

Key Specifications

ParameterValue
Channel TypeN Channel
Drain Source Voltage (Vds)60 V
Continuous Drain Current (Id)190 mA
Drain Source On Resistance (Rds(on)) @ Vgs = 10 V3 Ω
Gate Source Threshold Voltage (Vgs(th))1.6 V
Gate Source Voltage (Vgs)20 V
Power Dissipation (Pd)265 mW
Operating Temperature Range-55°C to +150°C
Package StyleSOT-23-3 (TO-236AB)
Mounting StyleSurface Mount
No. of Pins3 Pins
Gate Charge (Qg)0.33 nC @ Vgs = 4.5 V

Key Features

  • Fast switching times for efficient operation.
  • ESD protection up to 1.5 kV for enhanced reliability.
  • Low on-resistance (Rds(on)) of 3 Ω at Vgs = 10 V.
  • High drain source voltage rating of 60 V.
  • Compact SOT-23-3 (TO-236AB) package suitable for surface mount applications.
  • RoHS compliant and free from SVHC substances.

Applications

The NX7002AK,215 is typically used in various applications including:

  • Audio amplifiers.
  • Power management circuits.
  • Signal processing.
  • DC motor control.
  • Switching circuits and power supplies.

Q & A

  1. What is the maximum drain source voltage of the NX7002AK,215?
    The maximum drain source voltage (Vds) is 60 V.
  2. What is the continuous drain current rating of the NX7002AK,215?
    The continuous drain current (Id) is 190 mA.
  3. What is the typical gate source threshold voltage of the NX7002AK,215?
    The typical gate source threshold voltage (Vgs(th)) is 1.6 V.
  4. What is the package style of the NX7002AK,215?
    The package style is SOT-23-3 (TO-236AB).
  5. Is the NX7002AK,215 RoHS compliant?
    Yes, the NX7002AK,215 is RoHS compliant.
  6. What is the operating temperature range of the NX7002AK,215?
    The operating temperature range is -55°C to +150°C.
  7. What is the maximum power dissipation of the NX7002AK,215?
    The maximum power dissipation (Pd) is 265 mW.
  8. Does the NX7002AK,215 have ESD protection?
    Yes, it has ESD protection up to 1.5 kV.
  9. What are some common applications of the NX7002AK,215?
    Common applications include audio amplifiers, power management circuits, signal processing, DC motor control, and switching circuits.
  10. How many pins does the NX7002AK,215 have?
    The NX7002AK,215 has 3 pins.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.43 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:17 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):265mW (Ta), 1.33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NX7002AK,215
NX7002AK,215
MOSFET N-CH 60V 190MA TO236AB

Similar Products

Part Number NX7002AK,215 NX7002AKA215 NX7002AK2,215
Manufacturer Nexperia USA Inc. NXP USA Inc. NXP Semiconductors
Product Status Active Active Active
FET Type N-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 60 V - -
Current - Continuous Drain (Id) @ 25°C 190mA (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V - -
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V - -
Vgs(th) (Max) @ Id 2.1V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs 0.43 nC @ 4.5 V - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 17 pF @ 10 V - -
FET Feature - - -
Power Dissipation (Max) 265mW (Ta), 1.33W (Tc) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount - -
Supplier Device Package TO-236AB - -
Package / Case TO-236-3, SC-59, SOT-23-3 - -

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