2N7002PS115
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Nexperia USA Inc. 2N7002PS115

Manufacturer No:
2N7002PS115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA 2N7002PS - SMALL SI
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The 2N7002PS,115 is a dual N-channel Trench MOSFET manufactured by Nexperia USA Inc. This component is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It features a compact SOT-363 package, making it suitable for space-constrained designs. The MOSFET is known for its high efficiency, reliability, and robust performance characteristics.

Key Specifications

Parameter Min Typ Max Unit
Brand Nexperia
Channel Type N-Channel
Maximum Continuous Drain Current 320 mA mA
Maximum Drain Source Voltage 60 V V
Package Type SOT-363
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 2 Ω Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.75 2.4 V V
Minimum Gate Threshold Voltage 1.1 V V
Maximum Power Dissipation 420 mW mW
Maximum Operating Temperature +150 °C °C
Minimum Operating Temperature -55 °C °C

Key Features

  • High Efficiency: The 2N7002PS,115 offers low on-state resistance and high current handling, making it efficient for various applications.
  • Compact Package: The SOT-363 package is ideal for space-constrained designs, allowing for more compact and efficient circuit layouts.
  • Robust Performance: With a maximum drain-source voltage of 60 V and a maximum continuous drain current of 320 mA, this MOSFET is robust and reliable.
  • Enhancement Mode: The enhancement mode operation ensures that the MOSFET is normally off, reducing power consumption when not in use.
  • Wide Operating Temperature Range: The component can operate from -55 °C to +150 °C, making it suitable for a variety of environmental conditions.

Applications

  • Automotive Systems: Used in various automotive applications such as power management, motor control, and battery management systems.
  • Industrial Control: Suitable for industrial control systems, including motor drives, power supplies, and switching circuits.
  • Consumer Electronics: Found in consumer electronics such as power adapters, battery chargers, and other portable devices.
  • Power Management: Used in power management circuits for efficient power handling and switching.
  • General Purpose Switching: Ideal for general-purpose switching applications where high efficiency and reliability are required.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002PS,115 MOSFET?

    The maximum drain-source voltage is 60 V.

  2. What is the maximum continuous drain current of the 2N7002PS,115?

    The maximum continuous drain current is 320 mA.

  3. What is the package type of the 2N7002PS,115?

    The package type is SOT-363.

  4. What is the operating temperature range of the 2N7002PS,115?

    The operating temperature range is from -55 °C to +150 °C.

  5. What is the maximum power dissipation of the 2N7002PS,115?

    The maximum power dissipation is 420 mW.

  6. What is the channel mode of the 2N7002PS,115 MOSFET?

    The channel mode is enhancement.

  7. What is the typical gate charge of the 2N7002PS,115?

    The typical gate charge is 0.6 nC at Vgs = 2.5 V.

  8. What are the common applications of the 2N7002PS,115?

    Common applications include automotive systems, industrial control, consumer electronics, power management, and general-purpose switching.

  9. What is the maximum gate-source voltage of the 2N7002PS,115?

    The maximum gate-source voltage is -20 V to +20 V.

  10. Where can I find the datasheet and other technical documents for the 2N7002PS,115?

    You can find the datasheet and other technical documents on the official Nexperia website or through authorized distributors like RS Components and X-On Electronics.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
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