Overview
The SCT30N120 is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics. This device leverages the advanced properties of wide bandgap materials, resulting in unsurpassed on-resistance per unit area and excellent switching performance that is almost independent of temperature. The SCT30N120 is housed in the proprietary HiP247™ package, which offers an industry-standard outline with significantly improved thermal capability. This makes the device highly suitable for high-efficiency and high power density applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 1200 | V |
| Gate-Source Voltage (Vgs) | -10 to 25 | V |
| Continuous Drain Current at TC = 25 °C (limited by die) | 45 | A |
| Continuous Drain Current at TC = 25 °C (limited by package) | 40 | A |
| Continuous Drain Current at TC = 100 °C | 34 | A |
| Pulsed Drain Current | 90 | A |
| Total Dissipation at TC = 25 °C | 270 | W |
| Storage Temperature Range | -55 to 200 | °C |
| Operating Junction Temperature Range | -55 to 200 | °C |
| Static Drain-Source On-Resistance (Rds(on)) at Vgs = 20 V, ID = 20 A, TJ = 150 °C | 90 | mΩ |
| Gate Threshold Voltage (Vgs(th)) at ID = 1 mA | 1.8 to 3.5 | V |
| Input Capacitance (Ciss) at Vds = 400 V, f = 1 MHz, Vgs = 0 V | 1700 | pF |
| Total Gate Charge (Qg) at VDD = 800 V, ID = 20 A, Vgs = 0 to 20 V | 105 | nC |
Key Features
- Very tight variation of on-resistance vs. temperature
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
- Unsurpassed on-resistance per unit area and excellent switching performance almost independent of temperature
- Proprietary HiP247™ package with improved thermal capability
Applications
- Solar inverters
- UPS (Uninterruptible Power Supplies)
- Motor drives
- High voltage DC-DC converters
- Switch mode power supplies
Q & A
- What is the maximum drain-source voltage of the SCT30N120?
The maximum drain-source voltage (Vds) is 1200 V.
- What is the continuous drain current at TC = 25 °C limited by the package?
The continuous drain current at TC = 25 °C limited by the package is 40 A.
- What is the operating junction temperature range of the SCT30N120?
The operating junction temperature range is -55 to 200 °C.
- What is the typical static drain-source on-resistance at Vgs = 20 V, ID = 20 A, and TJ = 150 °C?
The typical static drain-source on-resistance is 90 mΩ.
- What are the key applications of the SCT30N120?
The key applications include solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.
- What is the gate threshold voltage range of the SCT30N120?
The gate threshold voltage range is 1.8 to 3.5 V.
- What is the input capacitance at Vds = 400 V, f = 1 MHz, and Vgs = 0 V?
The input capacitance is 1700 pF.
- What is the total gate charge at VDD = 800 V, ID = 20 A, and Vgs = 0 to 20 V?
The total gate charge is 105 nC.
- What package type is used for the SCT30N120?
The SCT30N120 is housed in the proprietary HiP247™ package.
- What are the benefits of using silicon carbide (SiC) in the SCT30N120?
The use of SiC results in unsurpassed on-resistance per unit area, excellent switching performance almost independent of temperature, and very high operating junction temperature capability.
