C3M0040120K
  • Share:

Wolfspeed, Inc. C3M0040120K

Manufacturer No:
C3M0040120K
Manufacturer:
Wolfspeed, Inc.
Package:
Tube
Description:
1200V 40MOHM SIC MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The C3M0040120K is a 1200 V, 40 mΩ, discrete Silicon Carbide (SiC) MOSFET produced by Wolfspeed, Inc. This industrial-qualified device is packaged in a TO-247-4 configuration, making it suitable for high-power applications. With over 30 years of experience in Silicon Carbide technology, Wolfspeed has established a reputation for delivering highly reliable and robust power devices. The C3M0040120K is part of Wolfspeed’s broad portfolio of SiC MOSFETs, which are known for their high blocking voltage, low on-resistance, and fast switching capabilities.

Key Specifications

Parameter Value
Part Number C3M0040120K
Blocking Voltage 1200 V
RDS(ON) at 25°C 40 mΩ
Current Rating 66 A
Tjmax 175 °C
Package TO-247-4
Qualification Industrial
Halogen Free Yes
RoHS Declaration Compliant

Key Features

  • Stable RDS(ON) over temperature: Ensures consistent performance across a wide temperature range.
  • Available in package options with separate Kelvin source pin: Enhances the device's switching performance and thermal management.
  • Extremely fast switching: Reduces switching losses and enables high-frequency operation.
  • Reduction of heat-sink requirements: Due to lower thermal losses, the need for extensive cooling systems is minimized.
  • High blocking voltage with industry-leading low RDS(ON): Optimizes for low conduction losses and high efficiency in power applications.

Applications

  • Automotive drive trains: Suitable for electric vehicle powertrains and other automotive applications requiring high power and efficiency.
  • Motor drives: Ideal for high-power motor control systems due to its fast switching and low losses.
  • Solid-state circuit breakers: Used in high-reliability, fast-switching applications such as circuit protection.
  • Resonant topologies: Optimized for resonant converter designs where fast switching and low losses are critical.
  • Industrial power supplies and renewable energy systems: Enhances efficiency and reduces system size and weight in various industrial and renewable energy applications.

Q & A

  1. What is the blocking voltage of the C3M0040120K MOSFET?

    The blocking voltage of the C3M0040120K MOSFET is 1200 V.

  2. What is the on-resistance (RDS(ON)) of the C3M0040120K at 25°C?

    The on-resistance (RDS(ON)) of the C3M0040120K at 25°C is 40 mΩ.

  3. What is the current rating of the C3M0040120K MOSFET?

    The current rating of the C3M0040120K MOSFET is 66 A.

  4. What is the maximum junction temperature (Tjmax) of the C3M0040120K?

    The maximum junction temperature (Tjmax) of the C3M0040120K is 175 °C.

  5. In what package is the C3M0040120K MOSFET available?

    The C3M0040120K MOSFET is available in a TO-247-4 package.

  6. Is the C3M0040120K MOSFET halogen-free?

    Yes, the C3M0040120K MOSFET is halogen-free.

  7. What are some of the key applications for the C3M0040120K MOSFET?

    The C3M0040120K MOSFET is suitable for automotive drive trains, motor drives, solid-state circuit breakers, resonant topologies, and industrial power supplies and renewable energy systems.

  8. What are the benefits of using Silicon Carbide (SiC) MOSFETs like the C3M0040120K?

    SiC MOSFETs like the C3M0040120K offer high blocking voltage, low on-resistance, fast switching, and reduced thermal losses, which can lead to higher efficiency, smaller system size, and lower cooling requirements.

  9. Is the C3M0040120K MOSFET RoHS compliant?

    Yes, the C3M0040120K MOSFET is RoHS compliant.

  10. Where can I find detailed documentation for the C3M0040120K MOSFET?

    Detailed documentation, including data sheets, user guides, and application notes, can be found on Wolfspeed’s official website and through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id:3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs:99 nC @ 15 V
Vgs (Max):+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):326W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4L
Package / Case:TO-247-4
0 Remaining View Similar

In Stock

$23.79
33

Please send RFQ , we will respond immediately.

Same Series
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number C3M0040120K C3M0040120D
Manufacturer Wolfspeed, Inc. Wolfspeed, Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc) 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V 15V
Rds On (Max) @ Id, Vgs 53.5mOhm @ 33.3A, 15V 53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id 3.6V @ 9.2mA 3.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 15 V 101 nC @ 15 V
Vgs (Max) +15V, -4V +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 1000 V 2900 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 326W (Tc) 326W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4L TO-247-3
Package / Case TO-247-4 TO-247-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L

Related Product By Brand

CGH40010F
CGH40010F
Wolfspeed, Inc.
RF MOSFET HEMT 28V 440166
CGHV96100F2
CGHV96100F2
Wolfspeed, Inc.
RF MOSFET HEMT 40V 440210
C3M0040120K
C3M0040120K
Wolfspeed, Inc.
1200V 40MOHM SIC MOSFET