C3M0040120K
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Wolfspeed, Inc. C3M0040120K

Manufacturer No:
C3M0040120K
Manufacturer:
Wolfspeed, Inc.
Package:
Tube
Description:
1200V 40MOHM SIC MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The C3M0040120K is a 1200 V, 40 mΩ, discrete Silicon Carbide (SiC) MOSFET produced by Wolfspeed, Inc. This industrial-qualified device is packaged in a TO-247-4 configuration, making it suitable for high-power applications. With over 30 years of experience in Silicon Carbide technology, Wolfspeed has established a reputation for delivering highly reliable and robust power devices. The C3M0040120K is part of Wolfspeed’s broad portfolio of SiC MOSFETs, which are known for their high blocking voltage, low on-resistance, and fast switching capabilities.

Key Specifications

Parameter Value
Part Number C3M0040120K
Blocking Voltage 1200 V
RDS(ON) at 25°C 40 mΩ
Current Rating 66 A
Tjmax 175 °C
Package TO-247-4
Qualification Industrial
Halogen Free Yes
RoHS Declaration Compliant

Key Features

  • Stable RDS(ON) over temperature: Ensures consistent performance across a wide temperature range.
  • Available in package options with separate Kelvin source pin: Enhances the device's switching performance and thermal management.
  • Extremely fast switching: Reduces switching losses and enables high-frequency operation.
  • Reduction of heat-sink requirements: Due to lower thermal losses, the need for extensive cooling systems is minimized.
  • High blocking voltage with industry-leading low RDS(ON): Optimizes for low conduction losses and high efficiency in power applications.

Applications

  • Automotive drive trains: Suitable for electric vehicle powertrains and other automotive applications requiring high power and efficiency.
  • Motor drives: Ideal for high-power motor control systems due to its fast switching and low losses.
  • Solid-state circuit breakers: Used in high-reliability, fast-switching applications such as circuit protection.
  • Resonant topologies: Optimized for resonant converter designs where fast switching and low losses are critical.
  • Industrial power supplies and renewable energy systems: Enhances efficiency and reduces system size and weight in various industrial and renewable energy applications.

Q & A

  1. What is the blocking voltage of the C3M0040120K MOSFET?

    The blocking voltage of the C3M0040120K MOSFET is 1200 V.

  2. What is the on-resistance (RDS(ON)) of the C3M0040120K at 25°C?

    The on-resistance (RDS(ON)) of the C3M0040120K at 25°C is 40 mΩ.

  3. What is the current rating of the C3M0040120K MOSFET?

    The current rating of the C3M0040120K MOSFET is 66 A.

  4. What is the maximum junction temperature (Tjmax) of the C3M0040120K?

    The maximum junction temperature (Tjmax) of the C3M0040120K is 175 °C.

  5. In what package is the C3M0040120K MOSFET available?

    The C3M0040120K MOSFET is available in a TO-247-4 package.

  6. Is the C3M0040120K MOSFET halogen-free?

    Yes, the C3M0040120K MOSFET is halogen-free.

  7. What are some of the key applications for the C3M0040120K MOSFET?

    The C3M0040120K MOSFET is suitable for automotive drive trains, motor drives, solid-state circuit breakers, resonant topologies, and industrial power supplies and renewable energy systems.

  8. What are the benefits of using Silicon Carbide (SiC) MOSFETs like the C3M0040120K?

    SiC MOSFETs like the C3M0040120K offer high blocking voltage, low on-resistance, fast switching, and reduced thermal losses, which can lead to higher efficiency, smaller system size, and lower cooling requirements.

  9. Is the C3M0040120K MOSFET RoHS compliant?

    Yes, the C3M0040120K MOSFET is RoHS compliant.

  10. Where can I find detailed documentation for the C3M0040120K MOSFET?

    Detailed documentation, including data sheets, user guides, and application notes, can be found on Wolfspeed’s official website and through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id:3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs:99 nC @ 15 V
Vgs (Max):+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):326W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4L
Package / Case:TO-247-4
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Similar Products

Part Number C3M0040120K C3M0040120D
Manufacturer Wolfspeed, Inc. Wolfspeed, Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc) 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V 15V
Rds On (Max) @ Id, Vgs 53.5mOhm @ 33.3A, 15V 53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id 3.6V @ 9.2mA 3.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 15 V 101 nC @ 15 V
Vgs (Max) +15V, -4V +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 1000 V 2900 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 326W (Tc) 326W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4L TO-247-3
Package / Case TO-247-4 TO-247-3

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1200V 40MOHM SIC MOSFET