STW62N65M5
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STMicroelectronics STW62N65M5

Manufacturer No:
STW62N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 46A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW62N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is specifically designed for high-power applications requiring superior efficiency and reliability. It is AEC-Q101 qualified, making it suitable for automotive applications. The STW62N65M5 offers extremely low on-resistance, low gate charge, and input capacitance, which enhance its switching performance and overall system energy efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
ID (Drain Current) 26 A
RDS(on) (On-Resistance) 0.032 Ω
PD (Power Dissipation) 330 W
Package TO-247
Operating Temperature Range -40 to 150 °C
AEC-Q101 Qualification Yes

Key Features

  • Designed for automotive applications and AEC-Q101 qualified.
  • Extremely low on-resistance (RDS(on)) as low as 0.032Ω.
  • Low gate charge (Qg) and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested.
  • High VDS rating and high dv/dt capability.

Applications

The STW62N65M5 is primarily used in switching applications, particularly in automotive power and control modules. Its high VDS rating and low on-resistance make it ideal for high-power applications requiring superior efficiency and reliability.

Q & A

  1. What is the drain-source voltage (VDS) of the STW62N65M5?

    The drain-source voltage (VDS) of the STW62N65M5 is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STW62N65M5?

    The typical on-resistance (RDS(on)) of the STW62N65M5 is 0.032 Ω.

  3. Is the STW62N65M5 AEC-Q101 qualified?

    Yes, the STW62N65M5 is AEC-Q101 qualified, making it suitable for automotive applications.

  4. What is the package type of the STW62N65M5?

    The STW62N65M5 comes in a TO-247 package.

  5. What are the key features of the STW62N65M5?

    The key features include extremely low on-resistance, low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing).

  6. What are the typical applications of the STW62N65M5?

    The STW62N65M5 is typically used in switching applications, particularly in automotive power and control modules).

  7. What is the operating temperature range of the STW62N65M5?

    The operating temperature range of the STW62N65M5 is -40 to 150 °C).

  8. Does the STW62N65M5 have high dv/dt capability?

    Yes, the STW62N65M5 has high dv/dt capability).

  9. Where can I find EDA symbols, footprints, and 3D models for the STW62N65M5?

    You can find EDA symbols, footprints, and 3D models for the STW62N65M5 on the STMicroelectronics website).

  10. Is the STW62N65M5 RoHS compliant?

    Yes, the STW62N65M5 is RoHS compliant with an Ecopack2 grade).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:49mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:142 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:6420 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW62N65M5 STW69N65M5 STW32N65M5 STW42N65M5 STW60N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 58A (Tc) 24A (Tc) 33A (Tc) 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 49mOhm @ 23A, 10V 45mOhm @ 29A, 10V 119mOhm @ 12A, 10V 79mOhm @ 16.5A, 10V 59mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 142 nC @ 10 V 143 nC @ 10 V 72 nC @ 10 V 100 nC @ 10 V 139 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 6420 pF @ 100 V 6420 pF @ 100 V 3320 pF @ 100 V 4650 pF @ 100 V 6810 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 330W (Tc) 330W (Tc) 150W (Tc) 190W (Tc) 255W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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