Overview
The STW69N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The result is a MOSFET with extremely low on-resistance, making it especially suitable for applications requiring superior power density and outstanding efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Maximum Drain-Source Voltage) | 650 | V |
| VGS (Maximum Gate-Source Voltage) | ±25 | V |
| ID (Maximum Drain Current at TC = 25 °C) | 58 | A |
| ID (Maximum Drain Current at TC = 100 °C) | 36.5 | A |
| IDM (Maximum Pulsed Drain Current) | 232 | A |
| PTOT (Total Dissipation at TC = 25 °C) | 330 | W |
| RDS(on) (Static Drain-Source On-Resistance) | 0.037 (typ), 0.045 (max) | Ω |
| Tj (Maximum Operating Junction Temperature) | 150 | °C |
| Tstg (Storage Temperature) | -55 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 0.38 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 50 | °C/W |
Key Features
- Worldwide best RDS(on) * area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
- Easy to drive, especially in the TO247-4 package with an extra driving source pin
Applications
- Switching applications
- High efficiency switching applications:
- Servers
- PV inverters
- Telecom infrastructure
- Multi kW battery chargers
Q & A
- What is the maximum drain-source voltage of the STW69N65M5 MOSFET?
The maximum drain-source voltage (VDS) is 650 V.
- What is the maximum gate-source voltage of the STW69N65M5 MOSFET?
The maximum gate-source voltage (VGS) is ±25 V.
- What is the maximum continuous drain current at 25 °C for the STW69N65M5 MOSFET?
The maximum continuous drain current (ID) at 25 °C is 58 A.
- What is the thermal resistance junction-case for the STW69N65M5 MOSFET in the TO-247 package?
The thermal resistance junction-case (Rthj-case) is 0.38 °C/W.
- What are the key features of the STW69N65M5 MOSFET?
The key features include worldwide best RDS(on) * area, higher VDSS rating, high dv/dt capability, excellent switching performance, and 100% avalanche testing.
- In which packages is the STW69N65M5 MOSFET available?
The STW69N65M5 MOSFET is available in TO-3PF, TO-247, and TO247-4 packages.
- What is the maximum operating junction temperature for the STW69N65M5 MOSFET?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the total dissipation at 25 °C for the STW69N65M5 MOSFET?
The total dissipation (PTOT) at 25 °C is 330 W.
- What are some typical applications of the STW69N65M5 MOSFET?
Typical applications include high efficiency switching in servers, PV inverters, telecom infrastructure, and multi kW battery chargers.
- What is the static drain-source on-resistance of the STW69N65M5 MOSFET?
The static drain-source on-resistance (RDS(on)) is typically 0.037 Ω and a maximum of 0.045 Ω.
