Overview
The STY60NM60 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh™ family, which combines the Multiple Drain process with the company's PowerMESH™ horizontal layout. This technology results in outstanding low on-resistance, high dv/dt capabilities, and excellent avalanche characteristics. The MOSFET is designed to enhance power density in high voltage converters, enabling system miniaturization and higher efficiencies.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Drain Current (continuous) at TC = 25°C | 60 | A |
| Drain Current (continuous) at TC = 100°C | 37.8 | A |
| Pulsed Drain Current | 240 | A |
| Static Drain-Source On Resistance (RDS(on)) | 0.050 - 0.055 | Ω |
| Gate-Source Voltage (VGS) | ±30 | V |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Total Dissipation at TC = 25°C | 560 | W |
| Maximum Junction Temperature (Tj(max)) | 150 | °C |
| Thermal Resistance Junction-case (Rthj-case) | 0.22 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 30 | °C/W |
Key Features
- Low On-Resistance: The STY60NM60 features a very low static drain-source on resistance (RDS(on)) of 0.050 - 0.055 Ω, enhancing overall system efficiency.
- High dv/dt and Avalanche Capabilities: It has high dv/dt and excellent avalanche characteristics, making it suitable for demanding applications.
- ESD Protection: Built-in back-to-back Zener diodes enhance ESD capability and protect the device from voltage transients.
- Low Input Capacitance and Gate Charge: Low input capacitance and gate charge reduce switching losses and improve dynamic performance.
- Tight Process Control: The MOSFET benefits from tight process control, ensuring consistent performance across devices.
Applications
The STY60NM60 is highly suitable for applications requiring high power density and efficiency, such as:
- High voltage converters
- Power supplies
- Motor drives
- Industrial power systems
- Automotive systems (where applicable)
Q & A
- What is the maximum drain-source voltage of the STY60NM60?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 60 A at 25°C and 37.8 A at 100°C.
- What is the typical on-resistance of the STY60NM60?
The typical static drain-source on resistance (RDS(on)) is 0.050 - 0.055 Ω.
- Does the STY60NM60 have built-in ESD protection?
Yes, it has built-in back-to-back Zener diodes for ESD protection.
- What is the maximum junction temperature for the STY60NM60?
The maximum junction temperature (Tj(max)) is 150°C.
- What are the thermal resistance values for junction-case and junction-ambient?
The thermal resistance junction-case (Rthj-case) is 0.22 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 30 °C/W.
- What is the gate-source voltage range for the STY60NM60?
The gate-source voltage (VGS) range is ±30 V.
- What are the typical applications for the STY60NM60?
Typical applications include high voltage converters, power supplies, motor drives, and industrial power systems.
- What is the maximum pulsed drain current for the STY60NM60?
The maximum pulsed drain current is 240 A.
- What is the total dissipation at 25°C for the STY60NM60?
The total dissipation at 25°C is 560 W.
