STY60NM50
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STMicroelectronics STY60NM50

Manufacturer No:
STY60NM50
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 60A MAX247
Delivery:
Payment:
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Product Introduction

Overview

The STY60NM50 is a high-performance N-Channel power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ technology family, which combines the Multiple Drain process with STMicroelectronics' PowerMESH™ horizontal layout. This innovative technology enhances the dynamic performance of the MOSFET, making it suitable for high-voltage converter applications where power density and efficiency are critical.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)500 V
RDS(on) (On-State Resistance)0.045 Ω
ID (Drain Current)60 A
TJ (Junction Temperature)-55 to 150 °C
TSTG (Storage Temperature)-55 to 150 °C
TL (Lead Temperature for Soldering)300 °C

Key Features

  • MDmesh™ Technology: Combines Multiple Drain process with PowerMESH™ horizontal layout for improved dynamic performance.
  • High Voltage and Current Capability: 500 V drain-source voltage and 60 A drain current make it suitable for high-power applications.
  • Low On-State Resistance: 0.045 Ω RDS(on) reduces power losses and enhances efficiency.
  • Zener Protection: Integrated Zener protection enhances reliability and robustness.
  • High Power Density: Enables system miniaturization and higher efficiencies in high-voltage converters.

Applications

  • High-Voltage Converters: Suitable for applications requiring high power density and efficiency, such as switch-mode power supplies and DC-DC converters.
  • Power Management Systems: Used in various power management systems where high reliability and performance are necessary.
  • Industrial and Automotive Systems: Applicable in industrial and automotive systems that require robust and efficient power handling.

Q & A

  1. What is the maximum drain-source voltage of the STY60NM50?
    The maximum drain-source voltage (VDS) of the STY60NM50 is 500 V.
  2. What is the on-state resistance of the STY60NM50?
    The on-state resistance (RDS(on)) of the STY60NM50 is 0.045 Ω.
  3. What is the maximum drain current of the STY60NM50?
    The maximum drain current (ID) of the STY60NM50 is 60 A.
  4. What is the junction temperature range of the STY60NM50?
    The junction temperature range (TJ) of the STY60NM50 is -55 to 150 °C.
  5. What is the storage temperature range of the STY60NM50?
    The storage temperature range (TSTG) of the STY60NM50 is -55 to 150 °C.
  6. What is the lead temperature for soldering the STY60NM50?
    The lead temperature for soldering (TL) of the STY60NM50 is 300 °C.
  7. What technology does the STY60NM50 use?
    The STY60NM50 uses MDmesh™ technology, which combines the Multiple Drain process with PowerMESH™ horizontal layout.
  8. What are the key applications of the STY60NM50?
    The STY60NM50 is suitable for high-voltage converters, power management systems, and industrial and automotive systems.
  9. Does the STY60NM50 have any built-in protection features?
    Yes, the STY60NM50 has integrated Zener protection.
  10. How does the STY60NM50 contribute to system design?
    The STY60NM50 enables system miniaturization and higher efficiencies in high-voltage converters due to its high power density and low on-state resistance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:266 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):560W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:MAX247™
Package / Case:TO-247-3
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Similar Products

Part Number STY60NM50 STY60NM60
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 30A, 10V 55mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 266 nC @ 10 V 266 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V 7300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 560W (Tc) 560W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package MAX247™ MAX247™
Package / Case TO-247-3 TO-247-3

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