Overview
The STW4N150 is a high-performance N-channel Power MOSFET designed by STMicroelectronics using their consolidated high voltage MESH OVERLAY process. This device is part of an advanced family of very high voltage Power MOSFETs, offering outstanding performances. The strengthened layout and proprietary edge termination structure provide the lowest RDS(on) per area, unrivalled gate charge, and superior switching characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 1500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 4 | A |
| Continuous Drain Current (ID) at TC = 100°C | 2.5 | A |
| Pulsed Drain Current (IDM) | 12 | A |
| Total Power Dissipation (PTOT) at TC = 25°C | 160 | W |
| Storage Temperature Range | -55 to 150 | °C |
| Operating Junction Temperature Range | -55 to 150 | °C |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.78 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 62.5 | °C/W |
| Avalanche Current (IAR) | 4 | A |
| Single Pulse Avalanche Energy (EAS) | 350 | mJ |
| Static Drain-Source On Resistance (RDS(on)) | < 7 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
| Total Gate Charge (Qg) | 29 to 50 | nC |
| Turn-on Delay Time (td(on)) | 34 | ns |
| Rise Time (tr) | 31 | ns |
| Turn-off Delay Time (td(off)) | 47 | ns |
| Fall Time (tf) | 45 | ns |
Key Features
- 100% avalanche tested
- High speed switching capabilities
- Intrinsic capacitances and Qg minimized
- Fully isolated TO-3PF and TO-220FH plastic packages
- Creepage distance path is 5.4 mm (typ.) for TO-3PF and > 4 mm for TO-220FH
- Low RDS(on) per area and unrivalled gate charge and switching characteristics
Applications
The STW4N150 is primarily used in switching applications due to its high voltage and current handling capabilities, as well as its fast switching times and low on-resistance.
Q & A
- What is the maximum drain-source voltage of the STW4N150?
The maximum drain-source voltage (VDS) is 1500 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 4 A.
- What is the thermal resistance, junction-to-case (RthJC)?
The thermal resistance, junction-to-case (RthJC), is 0.78 °C/W.
- What are the key features of the STW4N150?
The key features include 100% avalanche testing, high speed switching, minimized intrinsic capacitances and Qg, fully isolated packages, and low RDS(on) per area.
- What is the typical creepage distance path for the TO-3PF package?
The creepage distance path for the TO-3PF package is 5.4 mm (typ.).
- What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) is 150 °C.
- What is the total gate charge (Qg)?
The total gate charge (Qg) is between 29 to 50 nC.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 34 ns, and the typical turn-off delay time (td(off)) is 47 ns.
- What is the single pulse avalanche energy (EAS)?
The single pulse avalanche energy (EAS) is 350 mJ.
- In which applications is the STW4N150 commonly used?
The STW4N150 is commonly used in switching applications.
