STFW4N150
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STMicroelectronics STFW4N150

Manufacturer No:
STFW4N150
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1500V 4A ISOWATT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STFW4N150 is a high-voltage N-channel MOSFET transistor produced by STMicroelectronics. This device is part of an advanced family of very high voltage MOSFETs designed using the well-consolidated high voltage MESH.OVERLAY™ process. The STFW4N150 is known for its high performance and reliability, making it suitable for various high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1500 V
ID (Drain Current)2.5 A
PD (Power Dissipation)63 W
VGS(th) (Threshold Voltage)2.5 V to 4 V
RDS(on) (On-State Resistance)1.2 Ω (typical at VGS = 10 V)
PackageTO3PF

Key Features

  • High voltage capability up to 1500 V
  • High current handling up to 2.5 A
  • Low on-state resistance (RDS(on)) of 1.2 Ω (typical at VGS = 10 V)
  • High power dissipation of 63 W
  • ECOPACK® compliant, indicating environmentally friendly packaging
  • Designed using the MESH.OVERLAY™ process for enhanced performance and reliability

Applications

The STFW4N150 is suitable for a variety of high-power applications, including:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Medical equipment
  • Aerospace and defense systems

Q & A

  1. What is the maximum drain-source voltage of the STFW4N150?
    The maximum drain-source voltage (VDS) of the STFW4N150 is 1500 V.
  2. What is the maximum drain current of the STFW4N150?
    The maximum drain current (ID) of the STFW4N150 is 2.5 A.
  3. What is the typical on-state resistance of the STFW4N150?
    The typical on-state resistance (RDS(on)) of the STFW4N150 is 1.2 Ω at VGS = 10 V.
  4. What package type is the STFW4N150 available in?
    The STFW4N150 is available in the TO3PF package.
  5. Is the STFW4N150 environmentally friendly?
    Yes, the STFW4N150 is ECOPACK® compliant, indicating environmentally friendly packaging.
  6. What process is used to design the STFW4N150?
    The STFW4N150 is designed using the MESH.OVERLAY™ process.
  7. What are some common applications of the STFW4N150?
    The STFW4N150 is commonly used in power supplies, motor control, industrial automation, medical equipment, and aerospace and defense systems.
  8. What is the power dissipation capability of the STFW4N150?
    The power dissipation capability of the STFW4N150 is 63 W.
  9. What is the threshold voltage range of the STFW4N150?
    The threshold voltage (VGS(th)) range of the STFW4N150 is 2.5 V to 4 V.
  10. Where can I find detailed specifications for the STFW4N150?
    Detailed specifications for the STFW4N150 can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
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Same Series
STP4N150
STP4N150
MOSFET N-CH 1500V 4A TO220AB
STFW4N150
STFW4N150
MOSFET N-CH 1500V 4A ISOWATT

Similar Products

Part Number STFW4N150 STFV4N150 STFW3N150
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7Ohm @ 2A, 10V 7Ohm @ 2A, 10V 9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 50 nC @ 10 V 29.3 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 1300 pF @ 25 V 939 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 63W (Tc) 40W (Tc) 63W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3PF TO-220 TO-3PF
Package / Case TO-3P-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-3P-3 Full Pack

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