STFW3N150
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STMicroelectronics STFW3N150

Manufacturer No:
STFW3N150
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1500V 2.5A ISOWATT
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STFW3N150 is a high-performance N-channel Power MOSFET designed by STMicroelectronics. This device is part of the PowerMESH series, which utilizes STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process to enhance performance and reliability. The STFW3N150 is available in various packages, including TO-3PF, H2PAK-2, TO-220, and TO-247, making it versatile for different application needs.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)1500V
Gate-source voltage (VGS)±30V
Drain current (continuous) at TC = 25 °C (ID)2.5A
Drain current (continuous) at TC = 100 °C (ID)1.6A
Drain current (pulsed) (IDM)10A
Total power dissipation at TC = 25 °C (PTOT)63W
Insulation withstand voltage (RMS) from all three leads to external heat sink (VISO)3.5 kV
Thermal resistance junction-case (Rthj-case)2°C/W
Thermal resistance junction-ambient (Rthj-amb)50°C/W
Avalanche current, repetitive or not-repetitive (IAR)2.5A
Single pulse avalanche energy (EAS)450 mJ

Key Features

  • 100% avalanche tested to ensure reliability under extreme conditions.
  • Intrinsic capacitances and Qg minimized for high-speed switching applications.
  • High speed switching capabilities.
  • Fully isolated TO-3PF plastic package with a creepage distance path of 5.4 mm (typical).
  • Available in multiple packages: TO-3PF, H2PAK-2, TO-220, and TO-247.

Applications

The STFW3N150 is designed for various switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive electronics.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STFW3N150?
    The maximum drain-source voltage (VDS) is 1500 V.
  2. What are the available packages for the STFW3N150?
    The STFW3N150 is available in TO-3PF, H2PAK-2, TO-220, and TO-247 packages.
  3. What is the continuous drain current (ID) at 25 °C?
    The continuous drain current (ID) at 25 °C is 2.5 A.
  4. What is the total power dissipation (PTOT) at 25 °C?
    The total power dissipation (PTOT) at 25 °C is 63 W.
  5. Is the STFW3N150 avalanche tested?
    Yes, the STFW3N150 is 100% avalanche tested.
  6. What is the thermal resistance junction-case (Rthj-case) for the TO-3PF package?
    The thermal resistance junction-case (Rthj-case) for the TO-3PF package is 2 °C/W.
  7. What is the single pulse avalanche energy (EAS) of the STFW3N150?
    The single pulse avalanche energy (EAS) is 450 mJ.
  8. What are the typical applications of the STFW3N150?
    The STFW3N150 is typically used in switching applications, including power supplies, motor control, high-frequency switching circuits, and industrial and automotive electronics.
  9. What is the insulation withstand voltage (VISO) from all three leads to the external heat sink?
    The insulation withstand voltage (VISO) from all three leads to the external heat sink is 3.5 kV.
  10. What is the storage temperature range for the STFW3N150?
    The storage temperature range is -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:939 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
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Same Series
STH3N150-2
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STFW3N150
STFW3N150
MOSFET N-CH 1500V 2.5A ISOWATT
STP3N150
STP3N150
MOSFET N-CH 1500V 2.5A TO220AB

Similar Products

Part Number STFW3N150 STFW3N170 STFW4N150 STFV3N150
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1700 V 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 2.6A (Tc) 4A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 1.3A, 10V 13Ohm @ 1.3A, 10V 7Ohm @ 2A, 10V 9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29.3 nC @ 10 V 44 nC @ 10 V 50 nC @ 10 V 29.3 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 939 pF @ 25 V 1100 pF @ 100 V 1300 pF @ 25 V 939 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 63W (Tc) 63W (Tc) 63W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3PF TO-3PF TO-3PF TO-220-3
Package / Case TO-3P-3 Full Pack TO-3P-3 Full Pack TO-3P-3 Full Pack TO-220-3 Full Pack, Isolated Tab

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