Overview
The STH3N150-2 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics. This device is part of the PowerMESH series, which utilizes STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. This technology enhances the device's performance, making it comparable to or even surpassing standard parts from other manufacturers. The STH3N150-2 is available in the H2PAK-2 package, which is known for its high power handling capabilities and thermal efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 1500 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 2.5 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 1.6 | A |
| Pulsed drain current (IDM) | 10 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 140 | W |
| Insulation withstand voltage (VISO) | 3.5 kV | V (RMS) |
| Thermal resistance junction-case (Rthj-case) | 0.89 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 50 | °C/W |
| Avalanche current (IAR) | 2.5 | A |
| Single pulse avalanche energy (EAS) | 450 mJ | mJ |
Key Features
- High speed switching capabilities
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized for improved performance
- Fully isolated TO-3PF and H2PAK-2 packages with high creepage distance (5.4 mm typical for TO-3PF)
- ECOPACK compliant packages for environmental sustainability
Applications
- Switching applications in power supplies and converters
- Motor control and drive systems
- High-power electronic devices requiring efficient and reliable switching
- Industrial and automotive systems where high voltage and current handling are necessary
Q & A
- What is the maximum drain-source voltage (VDS) of the STH3N150-2?
The maximum drain-source voltage (VDS) is 1500 V.
- What is the continuous drain current (ID) at 25 °C for the STH3N150-2?
The continuous drain current (ID) at 25 °C is 2.5 A.
- What is the total power dissipation (PTOT) at 25 °C for the STH3N150-2?
The total power dissipation (PTOT) at 25 °C is 140 W.
- What is the thermal resistance junction-case (Rthj-case) for the STH3N150-2 in the H2PAK-2 package?
The thermal resistance junction-case (Rthj-case) is 0.89 °C/W.
- Is the STH3N150-2 100% avalanche tested?
- What are the typical applications of the STH3N150-2?
The STH3N150-2 is typically used in switching applications, motor control, high-power electronic devices, and industrial and automotive systems.
- What package types are available for the STH3N150-2?
The STH3N150-2 is available in the H2PAK-2 package.
- What is the single pulse avalanche energy (EAS) for the STH3N150-2?
The single pulse avalanche energy (EAS) is 450 mJ.
- Are the packages of the STH3N150-2 ECOPACK compliant?
- What is the maximum gate-source voltage (VGS) for the STH3N150-2?
The maximum gate-source voltage (VGS) is ±30 V.
