STH3N150-2
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STMicroelectronics STH3N150-2

Manufacturer No:
STH3N150-2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1500V 2.5A H2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH3N150-2 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics. This device is part of the PowerMESH series, which utilizes STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. This technology enhances the device's performance, making it comparable to or even surpassing standard parts from other manufacturers. The STH3N150-2 is available in the H2PAK-2 package, which is known for its high power handling capabilities and thermal efficiency.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 1500 V
Gate-source voltage (VGS) ±30 V
Drain current (continuous) at TC = 25 °C (ID) 2.5 A
Drain current (continuous) at TC = 100 °C (ID) 1.6 A
Pulsed drain current (IDM) 10 A
Total power dissipation at TC = 25 °C (PTOT) 140 W
Insulation withstand voltage (VISO) 3.5 kV V (RMS)
Thermal resistance junction-case (Rthj-case) 0.89 °C/W
Thermal resistance junction-ambient (Rthj-amb) 50 °C/W
Avalanche current (IAR) 2.5 A
Single pulse avalanche energy (EAS) 450 mJ mJ

Key Features

  • High speed switching capabilities
  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized for improved performance
  • Fully isolated TO-3PF and H2PAK-2 packages with high creepage distance (5.4 mm typical for TO-3PF)
  • ECOPACK compliant packages for environmental sustainability

Applications

  • Switching applications in power supplies and converters
  • Motor control and drive systems
  • High-power electronic devices requiring efficient and reliable switching
  • Industrial and automotive systems where high voltage and current handling are necessary

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STH3N150-2?

    The maximum drain-source voltage (VDS) is 1500 V.

  2. What is the continuous drain current (ID) at 25 °C for the STH3N150-2?

    The continuous drain current (ID) at 25 °C is 2.5 A.

  3. What is the total power dissipation (PTOT) at 25 °C for the STH3N150-2?

    The total power dissipation (PTOT) at 25 °C is 140 W.

  4. What is the thermal resistance junction-case (Rthj-case) for the STH3N150-2 in the H2PAK-2 package?

    The thermal resistance junction-case (Rthj-case) is 0.89 °C/W.

  5. Is the STH3N150-2 100% avalanche tested?
  6. What are the typical applications of the STH3N150-2?

    The STH3N150-2 is typically used in switching applications, motor control, high-power electronic devices, and industrial and automotive systems.

  7. What package types are available for the STH3N150-2?

    The STH3N150-2 is available in the H2PAK-2 package.

  8. What is the single pulse avalanche energy (EAS) for the STH3N150-2?

    The single pulse avalanche energy (EAS) is 450 mJ.

  9. Are the packages of the STH3N150-2 ECOPACK compliant?
  10. What is the maximum gate-source voltage (VGS) for the STH3N150-2?

    The maximum gate-source voltage (VGS) is ±30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:939 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab) Variant
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