STP3N150
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STMicroelectronics STP3N150

Manufacturer No:
STP3N150
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1500V 2.5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP3N150 is a high-performance N-Channel Power MOSFET designed by STMicroelectronics. This device is part of the MDmesh™ series and is known for its robust characteristics and high efficiency. The STP3N150 is packaged in a TO-220AB through-hole package, making it suitable for a variety of power management and switching applications. With its high voltage and current ratings, this MOSFET is ideal for systems requiring reliable and efficient power handling.

Key Specifications

ParameterValueUnit
Fet TypeN-Ch
No of Channels1
Drain-to-Source Voltage [Vdss]1500V
Drain-Source On Resistance-Max9Ω
Rated Power Dissipation140W
Gate Charge [Qg]29.3nC
Gate-Source Voltage-Max [Vgss]±30V
Drain Current2.5A
Turn-on Delay Time24ns
Turn-off Delay Time45ns
Rise Time47ns
Fall Time61ns
Operating Temp Range-50°C to +150°C
Gate Source Threshold3-5V
TechnologySilicon (Si)
Package StyleTO-220-3 (TO-220AB)
Mounting MethodThrough Hole
Height - Max5.87mm
Length10.4mm
Input Capacitance939pF

Key Features

  • 100% avalanche tested to ensure reliability under extreme conditions.
  • Intrinsic capacitances and gate charge (Qg) minimized for high-speed switching applications.
  • High-speed switching capabilities due to the optimized MESH OVERLAY™ process.
  • Fully isolated TO-220AB package with a creepage distance path, enhancing safety and reliability.
  • High voltage and current ratings, making it suitable for demanding power management tasks.

Applications

The STP3N150 is designed for various high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial power management systems.

Q & A

  1. What is the maximum drain-to-source voltage of the STP3N150?
    The maximum drain-to-source voltage (Vdss) is 1500 V.
  2. What is the maximum continuous drain current of the STP3N150?
    The maximum continuous drain current is 2.5 A at 25°C and 1.6 A at 100°C.
  3. What is the typical on-resistance of the STP3N150?
    The typical on-resistance (Rds(on)) is 9 Ω.
  4. What is the operating temperature range of the STP3N150?
    The operating temperature range is -50°C to +150°C.
  5. What is the gate-source threshold voltage of the STP3N150?
    The gate-source threshold voltage (Vgs(th)) ranges from 3 V to 5 V.
  6. What is the maximum gate-source voltage of the STP3N150?
    The maximum gate-source voltage (Vgss) is ±30 V.
  7. What is the typical gate charge of the STP3N150?
    The typical gate charge (Qg) is 29.3 nC at Vgs = 10 V.
  8. What are the switching times of the STP3N150?
    The turn-on delay time is 24 ns, the turn-off delay time is 45 ns, the rise time is 47 ns, and the fall time is 61 ns.
  9. What are the key features of the STP3N150?
    The key features include 100% avalanche testing, minimized intrinsic capacitances and Qg, high-speed switching, and a fully isolated TO-220AB package.
  10. What are some common applications of the STP3N150?
    Common applications include power supplies, motor control systems, high-frequency switching circuits, and industrial power management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:939 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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STP3N150
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Similar Products

Part Number STP3N150 STP4N150
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 1.3A, 10V 7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29.3 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 939 pF @ 25 V 1300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 140W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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