Overview
The STP4N150 is a high-performance N-channel Power MOSFET designed by STMicroelectronics using their consolidated high voltage MESH OVERLAY process. This device is part of an advanced family of very high voltage Power MOSFETs, offering outstanding performance characteristics. The STP4N150 is available in TO-220, TO-247, and TO-3PF packages, each tailored for different application needs.
The strengthened layout and proprietary edge termination structure of these MOSFETs result in the lowest RDS(on) per area, unrivalled gate charge, and superior switching characteristics. These features make the STP4N150 an ideal choice for high-voltage switching applications.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-source voltage | 1500 | V |
| VGS | Gate-source voltage | ±30 | V |
| ID | Drain current (continuous) at TC = 25 °C | 4 | A |
| ID | Drain current (continuous) at TC = 100 °C | 2.5 | A |
| IDM | Drain current (pulsed) | 12 | A |
| PTOT | Total power dissipation at TC = 25 °C | 160 | W |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sink | 3.5 kV | V |
| Tstg | Storage temperature range | -55 to 150 | °C |
| RDS(on) | Static drain-source on resistance | < 7 Ω | Ω |
| RthJC | Thermal resistance, junction-to-case | 0.78 | °C/W |
| RthJA | Thermal resistance, junction-to-ambient | 62.5 | °C/W |
Key Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic packages
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Lowest RDS(on) per area and unrivalled gate charge
- Superior switching characteristics
Applications
The STP4N150 is primarily designed for high-voltage switching applications. Its high performance and robust design make it suitable for a variety of uses, including:
- High-voltage power supplies
- Motor control and drive systems
- Industrial power conversion
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage of the STP4N150?
The maximum drain-source voltage (VDS) is 1500 V.
- What are the package options available for the STP4N150?
The STP4N150 is available in TO-220, TO-247, and TO-3PF packages.
- What is the continuous drain current rating at 25 °C?
The continuous drain current (ID) at 25 °C is 4 A.
- What is the total power dissipation at 25 °C for the TO-220 package?
The total power dissipation (PTOT) at 25 °C for the TO-220 package is 160 W.
- What is the insulation withstand voltage for the STP4N150?
The insulation withstand voltage (VISO) is 3.5 kV (RMS) from all three leads to the external heat sink.
- What is the thermal resistance from junction to case for the TO-220 package?
The thermal resistance from junction to case (RthJC) for the TO-220 package is 0.78 °C/W.
- What are the key features of the STP4N150?
The key features include 100% avalanche testing, minimized intrinsic capacitances and Qg, high speed switching, and fully isolated TO-3PF plastic packages.
- What is the typical creepage distance path for the TO-3PF package?
The creepage distance path for the TO-3PF package is 5.4 mm (typ.).
- What are the primary applications of the STP4N150?
The primary applications include high-voltage switching, high-voltage power supplies, motor control, and industrial power conversion.
- Is the STP4N150 RoHS compliant?
Yes, the STP4N150 is RoHS compliant and comes in Ecopack2 grade.
