STFW3N170
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STMicroelectronics STFW3N170

Manufacturer No:
STFW3N170
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1700V 2.6A ISOWATT
Delivery:
Payment:
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Product Introduction

Overview

The STFW3N170 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is designed using the company's advanced MESH. OVERLAY™ process, which ensures high efficiency and reliability. The STFW3N170 is packaged in a TO-3PF package, offering higher creepage between leads for enhanced safety and performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)1700 V
On-Resistance (Rds(on))13 Ω (typ.) at Vgs = 10 V, Id = 1.3 A
Continuous Drain Current (Id)2.6 A
Power Dissipation (Pd)63 W
Threshold Voltage (Vth)5 V at Id = 250 μA
PackageTO-3PF

Key Features

  • Intrinsic capacitances and Qg minimized for improved switching performance.
  • High speed switching capabilities.
  • 100% avalanche tested for reliability.
  • TO-3PF package for higher creepage between leads, enhancing safety and performance.

Applications

The STFW3N170 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial power systems.
  • High-voltage switching and power management systems.

Q & A

  1. What is the voltage rating of the STFW3N170?
    The voltage rating (Vds) of the STFW3N170 is 1700 V.
  2. What is the typical on-resistance of the STFW3N170?
    The typical on-resistance (Rds(on)) is 13 Ω at Vgs = 10 V, Id = 1.3 A.
  3. What is the continuous drain current of the STFW3N170?
    The continuous drain current (Id) is 2.6 A.
  4. What is the power dissipation of the STFW3N170?
    The power dissipation (Pd) is 63 W.
  5. What package type is used for the STFW3N170?
    The STFW3N170 is packaged in a TO-3PF package.
  6. What are the key features of the STFW3N170?
    The key features include minimized intrinsic capacitances and Qg, high speed switching, 100% avalanche testing, and a TO-3PF package for higher creepage between leads.
  7. What are some common applications for the STFW3N170?
    Common applications include power supplies, motor control, industrial power systems, and high-voltage switching and power management systems.
  8. What process is used to manufacture the STFW3N170?
    The STFW3N170 is manufactured using STMicroelectronics' MESH. OVERLAY™ process.
  9. Is the STFW3N170 RoHS compliant?
    Yes, the STFW3N170 is RoHS compliant.
  10. What is the threshold voltage of the STFW3N170?
    The threshold voltage (Vth) is 5 V at Id = 250 μA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
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Similar Products

Part Number STFW3N170 STFW3N150
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1.3A, 10V 9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 29.3 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 939 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 63W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PF TO-3PF
Package / Case TO-3P-3 Full Pack TO-3P-3 Full Pack

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