STFW3N170
  • Share:

STMicroelectronics STFW3N170

Manufacturer No:
STFW3N170
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1700V 2.6A ISOWATT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STFW3N170 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is designed using the company's advanced MESH. OVERLAY™ process, which ensures high efficiency and reliability. The STFW3N170 is packaged in a TO-3PF package, offering higher creepage between leads for enhanced safety and performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)1700 V
On-Resistance (Rds(on))13 Ω (typ.) at Vgs = 10 V, Id = 1.3 A
Continuous Drain Current (Id)2.6 A
Power Dissipation (Pd)63 W
Threshold Voltage (Vth)5 V at Id = 250 μA
PackageTO-3PF

Key Features

  • Intrinsic capacitances and Qg minimized for improved switching performance.
  • High speed switching capabilities.
  • 100% avalanche tested for reliability.
  • TO-3PF package for higher creepage between leads, enhancing safety and performance.

Applications

The STFW3N170 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial power systems.
  • High-voltage switching and power management systems.

Q & A

  1. What is the voltage rating of the STFW3N170?
    The voltage rating (Vds) of the STFW3N170 is 1700 V.
  2. What is the typical on-resistance of the STFW3N170?
    The typical on-resistance (Rds(on)) is 13 Ω at Vgs = 10 V, Id = 1.3 A.
  3. What is the continuous drain current of the STFW3N170?
    The continuous drain current (Id) is 2.6 A.
  4. What is the power dissipation of the STFW3N170?
    The power dissipation (Pd) is 63 W.
  5. What package type is used for the STFW3N170?
    The STFW3N170 is packaged in a TO-3PF package.
  6. What are the key features of the STFW3N170?
    The key features include minimized intrinsic capacitances and Qg, high speed switching, 100% avalanche testing, and a TO-3PF package for higher creepage between leads.
  7. What are some common applications for the STFW3N170?
    Common applications include power supplies, motor control, industrial power systems, and high-voltage switching and power management systems.
  8. What process is used to manufacture the STFW3N170?
    The STFW3N170 is manufactured using STMicroelectronics' MESH. OVERLAY™ process.
  9. Is the STFW3N170 RoHS compliant?
    Yes, the STFW3N170 is RoHS compliant.
  10. What is the threshold voltage of the STFW3N170?
    The threshold voltage (Vth) is 5 V at Id = 250 μA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
0 Remaining View Similar

In Stock

$6.43
89

Please send RFQ , we will respond immediately.

Similar Products

Part Number STFW3N170 STFW3N150
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1.3A, 10V 9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 29.3 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 939 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 63W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PF TO-3PF
Package / Case TO-3P-3 Full Pack TO-3P-3 Full Pack

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK

Related Product By Brand

SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN