STFW3N170
  • Share:

STMicroelectronics STFW3N170

Manufacturer No:
STFW3N170
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1700V 2.6A ISOWATT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STFW3N170 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is designed using the company's advanced MESH. OVERLAY™ process, which ensures high efficiency and reliability. The STFW3N170 is packaged in a TO-3PF package, offering higher creepage between leads for enhanced safety and performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)1700 V
On-Resistance (Rds(on))13 Ω (typ.) at Vgs = 10 V, Id = 1.3 A
Continuous Drain Current (Id)2.6 A
Power Dissipation (Pd)63 W
Threshold Voltage (Vth)5 V at Id = 250 μA
PackageTO-3PF

Key Features

  • Intrinsic capacitances and Qg minimized for improved switching performance.
  • High speed switching capabilities.
  • 100% avalanche tested for reliability.
  • TO-3PF package for higher creepage between leads, enhancing safety and performance.

Applications

The STFW3N170 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial power systems.
  • High-voltage switching and power management systems.

Q & A

  1. What is the voltage rating of the STFW3N170?
    The voltage rating (Vds) of the STFW3N170 is 1700 V.
  2. What is the typical on-resistance of the STFW3N170?
    The typical on-resistance (Rds(on)) is 13 Ω at Vgs = 10 V, Id = 1.3 A.
  3. What is the continuous drain current of the STFW3N170?
    The continuous drain current (Id) is 2.6 A.
  4. What is the power dissipation of the STFW3N170?
    The power dissipation (Pd) is 63 W.
  5. What package type is used for the STFW3N170?
    The STFW3N170 is packaged in a TO-3PF package.
  6. What are the key features of the STFW3N170?
    The key features include minimized intrinsic capacitances and Qg, high speed switching, 100% avalanche testing, and a TO-3PF package for higher creepage between leads.
  7. What are some common applications for the STFW3N170?
    Common applications include power supplies, motor control, industrial power systems, and high-voltage switching and power management systems.
  8. What process is used to manufacture the STFW3N170?
    The STFW3N170 is manufactured using STMicroelectronics' MESH. OVERLAY™ process.
  9. Is the STFW3N170 RoHS compliant?
    Yes, the STFW3N170 is RoHS compliant.
  10. What is the threshold voltage of the STFW3N170?
    The threshold voltage (Vth) is 5 V at Id = 250 μA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
0 Remaining View Similar

In Stock

$6.43
89

Please send RFQ , we will respond immediately.

Similar Products

Part Number STFW3N170 STFW3N150
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1.3A, 10V 9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 29.3 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 939 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 63W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PF TO-3PF
Package / Case TO-3P-3 Full Pack TO-3P-3 Full Pack

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
AST1S31HF
AST1S31HF
STMicroelectronics
IC REG BUCK ADJ 3A 8VFDFPN
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA