STW9N150
  • Share:

STMicroelectronics STW9N150

Manufacturer No:
STW9N150
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1500V 8A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW9N150 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics. It is part of the PowerMESH family, which utilizes the MESH OVERLAY™ process to enhance performance. This MOSFET is packaged in a TO-247 format and is known for its high voltage and current handling capabilities, making it suitable for various high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1500 V
RDS(on) (On-Resistance)1.8 Ω (typical)
ID (Drain Current)8 A
PD (Power Dissipation)320 W
PackageTO-247

Key Features

  • High voltage capability: 1500 V drain-source voltage.
  • Low on-resistance: 1.8 Ω typical.
  • High current handling: 8 A drain current.
  • High power dissipation: 320 W.
  • PowerMESH technology for improved performance.
  • TO-247 package for robust and reliable operation.

Applications

The STW9N150 is designed for high-power applications, including but not limited to:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Motor control and drives.
  • High-voltage industrial and medical equipment.
  • Aerospace and defense systems.

Q & A

  1. What is the maximum drain-source voltage of the STW9N150?
    The maximum drain-source voltage is 1500 V.
  2. What is the typical on-resistance of the STW9N150?
    The typical on-resistance is 1.8 Ω.
  3. What is the maximum drain current of the STW9N150?
    The maximum drain current is 8 A.
  4. In what package is the STW9N150 available?
    The STW9N150 is available in a TO-247 package.
  5. What technology is used in the STW9N150?
    The STW9N150 uses the PowerMESH technology.
  6. What are some common applications for the STW9N150?
    Common applications include switch-mode power supplies, DC-DC converters, motor control and drives, and high-voltage industrial and medical equipment.
  7. What is the maximum power dissipation of the STW9N150?
    The maximum power dissipation is 320 W.
  8. Where can I find detailed specifications for the STW9N150?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like DigiKey and TME.
  9. Is the STW9N150 suitable for high-voltage applications?
    Yes, the STW9N150 is specifically designed for high-voltage applications.
  10. What are the benefits of using PowerMESH technology in the STW9N150?
    The PowerMESH technology enhances the performance of the MOSFET by improving its electrical characteristics and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:89.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3255 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):320W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.87
21

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW9N150 STW4N150
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 4A, 10V 7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89.3 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3255 pF @ 25 V 1300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 320W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA