STW9N150
  • Share:

STMicroelectronics STW9N150

Manufacturer No:
STW9N150
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1500V 8A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW9N150 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics. It is part of the PowerMESH family, which utilizes the MESH OVERLAY™ process to enhance performance. This MOSFET is packaged in a TO-247 format and is known for its high voltage and current handling capabilities, making it suitable for various high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1500 V
RDS(on) (On-Resistance)1.8 Ω (typical)
ID (Drain Current)8 A
PD (Power Dissipation)320 W
PackageTO-247

Key Features

  • High voltage capability: 1500 V drain-source voltage.
  • Low on-resistance: 1.8 Ω typical.
  • High current handling: 8 A drain current.
  • High power dissipation: 320 W.
  • PowerMESH technology for improved performance.
  • TO-247 package for robust and reliable operation.

Applications

The STW9N150 is designed for high-power applications, including but not limited to:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Motor control and drives.
  • High-voltage industrial and medical equipment.
  • Aerospace and defense systems.

Q & A

  1. What is the maximum drain-source voltage of the STW9N150?
    The maximum drain-source voltage is 1500 V.
  2. What is the typical on-resistance of the STW9N150?
    The typical on-resistance is 1.8 Ω.
  3. What is the maximum drain current of the STW9N150?
    The maximum drain current is 8 A.
  4. In what package is the STW9N150 available?
    The STW9N150 is available in a TO-247 package.
  5. What technology is used in the STW9N150?
    The STW9N150 uses the PowerMESH technology.
  6. What are some common applications for the STW9N150?
    Common applications include switch-mode power supplies, DC-DC converters, motor control and drives, and high-voltage industrial and medical equipment.
  7. What is the maximum power dissipation of the STW9N150?
    The maximum power dissipation is 320 W.
  8. Where can I find detailed specifications for the STW9N150?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like DigiKey and TME.
  9. Is the STW9N150 suitable for high-voltage applications?
    Yes, the STW9N150 is specifically designed for high-voltage applications.
  10. What are the benefits of using PowerMESH technology in the STW9N150?
    The PowerMESH technology enhances the performance of the MOSFET by improving its electrical characteristics and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:89.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3255 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):320W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.87
21

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW9N150 STW4N150
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 4A, 10V 7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89.3 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3255 pF @ 25 V 1300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 320W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB