STW9N150
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STMicroelectronics STW9N150

Manufacturer No:
STW9N150
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1500V 8A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW9N150 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics. It is part of the PowerMESH family, which utilizes the MESH OVERLAY™ process to enhance performance. This MOSFET is packaged in a TO-247 format and is known for its high voltage and current handling capabilities, making it suitable for various high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1500 V
RDS(on) (On-Resistance)1.8 Ω (typical)
ID (Drain Current)8 A
PD (Power Dissipation)320 W
PackageTO-247

Key Features

  • High voltage capability: 1500 V drain-source voltage.
  • Low on-resistance: 1.8 Ω typical.
  • High current handling: 8 A drain current.
  • High power dissipation: 320 W.
  • PowerMESH technology for improved performance.
  • TO-247 package for robust and reliable operation.

Applications

The STW9N150 is designed for high-power applications, including but not limited to:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Motor control and drives.
  • High-voltage industrial and medical equipment.
  • Aerospace and defense systems.

Q & A

  1. What is the maximum drain-source voltage of the STW9N150?
    The maximum drain-source voltage is 1500 V.
  2. What is the typical on-resistance of the STW9N150?
    The typical on-resistance is 1.8 Ω.
  3. What is the maximum drain current of the STW9N150?
    The maximum drain current is 8 A.
  4. In what package is the STW9N150 available?
    The STW9N150 is available in a TO-247 package.
  5. What technology is used in the STW9N150?
    The STW9N150 uses the PowerMESH technology.
  6. What are some common applications for the STW9N150?
    Common applications include switch-mode power supplies, DC-DC converters, motor control and drives, and high-voltage industrial and medical equipment.
  7. What is the maximum power dissipation of the STW9N150?
    The maximum power dissipation is 320 W.
  8. Where can I find detailed specifications for the STW9N150?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like DigiKey and TME.
  9. Is the STW9N150 suitable for high-voltage applications?
    Yes, the STW9N150 is specifically designed for high-voltage applications.
  10. What are the benefits of using PowerMESH technology in the STW9N150?
    The PowerMESH technology enhances the performance of the MOSFET by improving its electrical characteristics and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:89.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3255 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):320W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW9N150 STW4N150
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 4A, 10V 7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89.3 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3255 pF @ 25 V 1300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 320W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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