Overview
The STW3N150 is a high-performance N-channel Power MOSFET designed by STMicroelectronics. It is fabricated using the consolidated strip-layout-based MESH OVERLAY process, which enhances its performance and reliability. This MOSFET is available in various packages, including TO-3PF, H²PAK-2, TO-220, and TO-247, making it versatile for different application requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 1500 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Continuous drain current (ID) at TC = 25 °C | 2.5 | A |
| Continuous drain current (ID) at TC = 100 °C | 1.6 | A |
| Pulsed drain current (IDM) | 10 | A |
| Total power dissipation (PTOT) at TC = 25 °C | 63 | W |
| Insulation withstand voltage (VISO) | 3.5 kV | V (RMS) |
| Thermal resistance junction-case (Rthj-case) | 2 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 50 | °C/W |
| Static drain-source on-resistance (RDS(on)) | 6 (typ.), 9 (max.) | Ω |
| Gate threshold voltage (VGS(th)) | 3 to 5 | V |
Key Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized for high-speed switching
- High speed switching capabilities
- Fully isolated TO-3PF plastic package with a creepage distance path of 5.4 mm (typ.)
- Available in multiple packages: TO-3PF, H²PAK-2, TO-220, and TO-247
- ECOPACK compliant for environmental sustainability
Applications
The STW3N150 Power MOSFET is designed for various switching applications, including but not limited to:
- High-power switching circuits
- Power supplies and converters
- Motor control and drive systems
- Industrial and automotive electronics
Q & A
- What is the maximum drain-source voltage (VDS) of the STW3N150?
The maximum drain-source voltage (VDS) is 1500 V. - What are the available packages for the STW3N150?
The STW3N150 is available in TO-3PF, H²PAK-2, TO-220, and TO-247 packages. - What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 2.5 A. - What is the total power dissipation (PTOT) at TC = 25 °C?
The total power dissipation (PTOT) at TC = 25 °C is 63 W. - What is the thermal resistance junction-case (Rthj-case) for the TO-3PF package?
The thermal resistance junction-case (Rthj-case) for the TO-3PF package is 2 °C/W. - Is the STW3N150 100% avalanche tested?
Yes, the STW3N150 is 100% avalanche tested. - What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 3 to 5 V. - What are the key features of the STW3N150?
The key features include 100% avalanche testing, minimized intrinsic capacitances and Qg, high-speed switching, and full isolation in the TO-3PF package. - What are some common applications of the STW3N150?
Common applications include high-power switching circuits, power supplies and converters, motor control and drive systems, and industrial and automotive electronics. - Is the STW3N150 ECOPACK compliant?
Yes, the STW3N150 is ECOPACK compliant, meeting environmental sustainability standards.
