Overview
The STW3N170 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics. This device is part of the PowerMESH™ series, which utilizes STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process to enhance performance. The STW3N170 is packaged in a TO-3PF package, offering higher creepage between leads and improved environmental compliance through ECOPACK® specifications.
This MOSFET is characterized by its high voltage rating of 1700 V, a typical on-resistance (RDS(on)) of 7 Ω, and a continuous drain current (ID) of 2.6 A at a case temperature of 25 °C. It is designed for high-speed switching applications, ensuring efficient and reliable operation in various power management systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 1700 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Continuous drain current (ID) at Tcase = 25 °C | 2.6 | A |
| Continuous drain current (ID) at Tcase = 100 °C | 1.6 | A |
| Pulsed drain current (IDM) | 10.4 | A |
| Total dissipation at Tcase = 25 °C (PTOT) | 63 | W |
| Static drain-source on-resistance (RDS(on)) | 7 - 13 | Ω |
| Gate threshold voltage (VGS(th)) | 3 - 5 | V |
| Thermal resistance junction-case (Rthj-case) | 2 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 50 | °C/W |
Key Features
- Intrinsic capacitances and Qg minimized for improved switching performance.
- TO-3PF package for higher creepage between leads, enhancing reliability and safety.
- High-speed switching capabilities, making it suitable for high-frequency applications.
- 100% avalanche tested to ensure robustness against transient conditions.
- ECOPACK® compliant, meeting environmental requirements and standards.
Applications
The STW3N170 is designed for various high-power switching applications, including:
- Power supplies and converters.
- Motor control and drives.
- High-voltage DC-DC converters.
- Industrial power management systems.
- Automotive and aerospace power systems requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW3N170?
The maximum drain-source voltage (VDS) is 1700 V.
- What is the typical on-resistance (RDS(on)) of the STW3N170?
The typical on-resistance (RDS(on)) is 7 Ω.
- What is the continuous drain current (ID) at a case temperature of 25 °C?
The continuous drain current (ID) at a case temperature of 25 °C is 2.6 A.
- What package type is used for the STW3N170?
The STW3N170 is packaged in a TO-3PF package.
- Is the STW3N170 100% avalanche tested?
Yes, the STW3N170 is 100% avalanche tested.
- What are the key features of the STW3N170?
The key features include minimized intrinsic capacitances and Qg, high-speed switching, and 100% avalanche testing.
- What are some common applications for the STW3N170?
Common applications include power supplies, motor control, high-voltage DC-DC converters, and industrial power management systems.
- What is the thermal resistance junction-case (Rthj-case) of the STW3N170?
The thermal resistance junction-case (Rthj-case) is 2 °C/W.
- Is the STW3N170 ECOPACK® compliant?
Yes, the STW3N170 is ECOPACK® compliant, meeting environmental requirements and standards.
- What is the gate threshold voltage (VGS(th)) range of the STW3N170?
The gate threshold voltage (VGS(th)) range is 3 to 5 V.
