Overview
The STS5NF60L is a medium-voltage N-channel power MOSFET developed by STMicroelectronics using their unique "Single Feature Size™" strip-based process. This technology results in a transistor with extremely high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The device is packaged in a standard SO-8 outline, facilitating easy automated surface mount assembly. It is designed for low threshold drive, making it suitable for a variety of industrial and automotive applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 5 | A |
| Continuous Drain Current (ID) at TC = 100°C | 3 | A |
| Pulsed Drain Current (IDM) | 20 | A |
| Total Dissipation at TC = 25°C | 2.5 | W |
| Derating Factor | 0.02 | W/°C |
| Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 2.5A | 0.045 - 0.055 | Ω |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
| Maximum Junction Temperature | 150 | °C |
| Storage Temperature | -55 to 150 | °C |
Key Features
- Standard Outline: The STS5NF60L comes in a standard SO-8 package, making it easy for automated surface mount assembly.
- Low Threshold Drive: The device is designed for low threshold drive, which is beneficial for various applications requiring efficient switching.
- High Packing Density: The unique "Single Feature Size™" strip-based process results in extremely high packing density, contributing to low on-resistance and rugged avalanche characteristics.
- Improved Manufacturing Reproducibility: The process reduces critical alignment steps, enhancing manufacturing reproducibility.
- ECOPACK® Packaging: The device is available in ECOPACK® packages, which are lead-free and comply with environmental standards.
Applications
The STS5NF60L is suitable for a broad range of industrial and automotive applications due to its medium-voltage capabilities and robust characteristics. It can be used in switching applications, power management systems, and other high-reliability environments where efficient power handling is crucial.
Q & A
- What is the maximum drain-source voltage of the STS5NF60L?
The maximum drain-source voltage (VDS) is 60V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 5A.
- What is the typical on-resistance of the STS5NF60L?
The typical static drain-source on resistance (RDS(on)) at VGS = 10V and ID = 2.5A is 0.045 - 0.055 Ω.
- What is the maximum junction temperature for the STS5NF60L?
The maximum junction temperature is 150°C.
- What type of packaging does the STS5NF60L use?
The device is packaged in a standard SO-8 outline and is available in ECOPACK® packages.
- What are the key benefits of the "Single Feature Size™" strip-based process?
This process results in high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility.
- What are some typical applications for the STS5NF60L?
The device is suitable for industrial and automotive applications, particularly in switching and power management systems.
- What is the gate threshold voltage range for the STS5NF60L?
The gate threshold voltage (VGS(th)) ranges from 1 to 2.5V.
- What is the maximum storage temperature for the STS5NF60L?
The storage temperature range is -55 to 150°C.
- Is the STS5NF60L RoHS compliant?
Yes, the STS5NF60L is RoHS compliant and comes in ECOPACK® packages.
